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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Nishimura, T. Yamaguchi, Y. Shimizu, M. Tsukamoto, K. Akasaka, Y. |
| Copyright Year | 1991 |
| Description | Author affiliation: Mitsubishi Electric Corp., Itami, Japan (Nishimura, T.; Yamaguchi, Y.; Shimizu, M.; Tsukamoto, K.; Akasaka, Y.) |
| Abstract | A 0.6 mu m CMOS technology on ultrathin SIMOX film was developed and applied to a 16 k CMOS gate array. By using NAND based ring oscillators, the contribution of the stray capacitance reduction to the speed performance was investigated, and the current drivability of MOSFETs on thin SIMOX under AC and DC operation was studied. The 16 bit*16 bit multiplier using 16 K CMOS gate array was successfully operated at a 1.5 times higher speed than the same circuit on bulk Si.< |
| Starting Page | 109 |
| Ending Page | 112 |
| File Size | 261643 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780302435 |
| ISSN | 01631918 |
| DOI | 10.1109/IEDM.1991.235412 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1991-12-08 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | CMOS technology Ring oscillators MOSFETs Parasitic capacitance Circuits Semiconductor films Isolation technology MOS devices Wiring Capacitance measurement |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
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