NDLI: Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates

Content Provider	IEEE Xplore Digital Library
Author	Umeda, H. Suzuki, A. Anda, Y. Ishida, M. Ueda, T. Tanaka, T. Ueda, D.
Copyright Year	2010
Description	Author affiliation: Advanced Technology Research Laboratories, Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo, Kyoto 617-8520, JAPAN (Ueda, D.) \|\| Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo, Kyoto 617-8520, JAPAN (Umeda, H.; Suzuki, A.; Anda, Y.; Ishida, M.; Ueda, T.; Tanaka, T.)
Abstract	We propose a novel technique to boost the blocking voltage of AlGaN/GaN hetero junction field effect transistors (HFETs) by widening a depletion layer in highly resistive Si substrate. The blocking-voltage boosting (BVB) technology utilizes ion implantation at the peripheral area of the chip as channel stoppers to terminate the leakage current from the interfacial inversion layers at AlN/Si. A depletion layer is widened in the substrate by the help of the channel stopper, which increases the blocking voltage of the HFET. The off-state breakdown voltage of the HFETs is increased up to 1340V by the BVB technology from 760V without the channel stoppers for the epitaxial GaN as thin as 1.4µm on Si. This technology greatly helps to increase the blocking voltage even for thin epitaxial GaN on Si, which leads to further reduction of the fabrication cost.
File Size	257030
File Format	PDF
ISBN	9781442474185
ISSN	2156017X
e-ISBN	9781424474202
e-ISBN	9781424474196
DOI	10.1109/IEDM.2010.5703400
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-12-06
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Gallium nitride Aluminum gallium nitride Substrates HEMTs MODFETs Epitaxial growth
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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