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Content Provider | IEEE Xplore Digital Library |
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Author | Chih-Chieh Yeh Chih-Sheng Chang Hong-Nien Lin Wei-Hsiung Tseng Li-Shyue Lai Tsu-Hsiu Perng Tsung-Lin Lee Chang-Yun Chang Liang-Gi Yao Chia-Cheng Chen Ta-Ming Kuan Xu, J.J. Chia-Cheng Ho Tzu-Chiang Chen Shyue-Shyh Lin Hun-Jan Tao Min Cao Chih-Hao Chang Ting-Chu Ko Neng-Kuo Chen Shih-Cheng Chen Chia-Pin Lin Hsien-Chin Lin Ching-Yu Chan Hung-Ta Lin Shu-Ting Yang Jyh-Cheng Sheu Chu-Yun Fu Shih-Ting Hung Feng Yuan Ming-Feng Shieh Chia-Feng Hu Wann, C. |
Copyright Year | 2010 |
Description | Author affiliation: Research & Development, Taiwan Semiconductor Manufacturing Company, No. 8, Li-Hsin 6th Rd., Hsinchu, Taiwan 30077, R.O.C. (Chih-Chieh Yeh; Chih-Sheng Chang; Hong-Nien Lin; Wei-Hsiung Tseng; Li-Shyue Lai; Tsu-Hsiu Perng; Tsung-Lin Lee; Chang-Yun Chang; Liang-Gi Yao; Chia-Cheng Chen; Ta-Ming Kuan; Xu, J.J.; Chia-Cheng Ho; Tzu-Chiang Chen; Shyue-Shyh Lin; Hun-Jan Tao; Min Cao; Chih-Hao Chang; Ting-Chu Ko; Neng-Kuo Chen; Shih-Cheng Chen; Chia-Pin Lin; Hsien-Chin Lin; Ching-Yu Chan; Hung-Ta Lin; Shu-Ting Yang; Jyh-Cheng Sheu; Chu-Yun Fu; Shih-Ting Hung; Feng Yuan; Ming-Feng Shieh; Chia-Feng Hu; Wann, C.) |
Abstract | We show that FinFET, a leading transistor architecture candidate of choice for high performance CPU applications [1–3], can also be extended for general purpose SoC applications by proper device optimization. We demonstrate superior, best-in-its-class performance to our knowledge, as well as multi-Vt flexibility for low-operating power (LOP) applications. By high-k/metal-gate (HK/MG) and process flow optimizations, significant drive current (ION) improvement and leakage current (IOFF) reduction have been achieved through equivalent oxide thickness (EOT) scaling and carrier mobility improvement. N-FinFET and P-FinFET achieve, when normalized to Weff (Weff=2xHf+Wf), ION of 1325 µA/µm and 1000 µA/µm at 1 nA/µm leakage current under VDD of 1 V, and 960 uA/um and 690 uA/um at 1 nA/um under Vdd of 0.8V, respectively. This FinFET transistor module is promising for a 32/28nm SoC technology. |
File Size | 143022 |
File Format | |
ISBN | 9781442474185 |
ISSN | 2156017X |
e-ISBN | 9781424474202 |
e-ISBN | 9781424474196 |
DOI | 10.1109/IEDM.2010.5703473 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2010-12-06 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Passivation FinFETs Performance evaluation System-on-a-chip Strain Logic gates |
Content Type | Text |
Resource Type | Article |
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