NDLI: Light emitting devices in the U.K.

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Ion implantation in semiconductors

Computer aided design—Fact or fable?

The peristaltic charge coupled device

Performance and operation of buried channel charge coupled devices

An overlapping electrode buried channel CCD

Staggered oxide $C^{4}D$ structure with clocked source repeater

Electrical characteristics of long CCD shift registers fabricated using $Al-Al_{2}O3-Al$ double level metallization

A high density overlapping gate charge coupled device array

A very high speed low power bipolar integrated circuit process

An improved dielectric-junction combination isolation technique for integrated circuits

A process for simultaneous fabrication of vertical NPN and PNP's Nch, and Pch MOS devices

A high-gain, low-noise transistor fabricated with electron beam lithography

Thermal response measurements for semiconductor device die attachment evaluation

Implanted resistors with properties enhanced by damage

New technique of doped oxide diffusion and its application to integrated circuit devices

Modeling of depletion load devices made by ion implantation

The GaAs dual-gate FET with low noise and wide dynamic range

Threshold voltage controllability in double diffused-MOS transistors

Charge storage junction field-effect transistor

Amnesia in layered insulator FET memory devices

A double-diffused MNOS transistor as a new non-volatile memory

Recent progress in the fabrication of photovoltaic Hg1-xCdxTe detectors

Hg.8Cd.2Te (PC)detectors under high optical flux densities

Photodetection by light-induced barrier modulation in Cu-diffused Au-CdS diodes

Growth of potassium tantalate dielectric crystals and their application as photovoltaic UV detectors

Optimization of responsivity in millimeter and submillimeter glow discharge detectors

Field calculations of planar diffused structures with field limiting rings

New semiconductor devices of ultra-high breakdown voltage

New gate structure for high power thyristor

An involute gate-emitter configuration for thyristors and transistors

Design optimization of high energy power transistors

Design and performance of two-phase charge-coupled devices with overlapping polysilicon and aluminum gates

The drain-source protected MNOS memory device and memory endurance

CCD and MNOS devices for programmable analog signal processing and digital nonvolatile memory

A new surface charge analog store

A high-speed p-channel random access 1024-bit memory made with electron lithography

4096-Bit charge coupled device serial memory array

Drain voltage limitations of short-channel M.O.S. transistors

Device design considerations for ion implanted MOSFETs

Ion implanted MOSFETs with very short channel lengths

DC Model for short-channel IGFET's

Source-drain breakdown in an insulated gate, field-effect transistor

N-Channel gallium arsenide MISFET

A dual mode electron gun having non-intercepting grids

Development of a double-octave, grid-controlled, dual-mode TWT

Dual-mode TWT design

5 KW Pulse/2 KW CW high efficiency S-band dual mode traveling-wave tube

Dual beam multi-circuit traveling-wave tube

Multi-octave traveling-wave tubes

Secondary electron emission characteristics of dielectric materials in plasma display panel

Time-dependent vector information display on gas-discharge display panels

A new flat panel TV display system

A self-scan® imaging display panel

Color techniques utilized in gas discharge display panels

Non-linear phosphor output in gas discharge devices

High contrast CRTs

Factors affecting the ultimate capabilities of high speed avalanche photodiodes and a review of the state-of-the-art

A high speed sampling photomultiplier

Standing wave ultrasonic Bragg-cell with application to ultrahigh data rate optical communication system

Recent advances in ultrawideband bandpass optical beam modulators

"Basic research in electronics; why it is needed and where it should be done"

CMOS-bipolar monolithic integrated-circuit technology

Monolithic integration of UHF amplifiers

Hybrid microelectronic programmable surface acoustic wave matched filters

A low resistance protection diode for MIS circuits

A new isolation structure for high density LSI

Identification and characterization of excess noise sources in ICS by correlation analysis

Metal-semiconductor technology for Ni/Au-Ge on n-GaAs

Lateral diffusion in GaAs

Lanthanum-modified Sr1-XBaXNb2O6ferroelectric crystals and their applications as infrared radiation detectors

Bulk acoustic delay lines utilizing sub-micron platelet LiNbO3transducer

Evaluation of PbSnTe detector fabrication procedures

A buried metallization and its application to a multilayer system

Computer-aided TWT design

The crossed-field amplifier computational and experimental results

Klystron studies using polarization variables

A 200 kilowatts S band klystron with TWT bandwidth capability

The development of a wide tuning-range, high-efficiency, air-cooled, 10 kW, UHF-TV klystron

Design consideration and performance of pyroelectric vidicons

Operational characteristics of the panned pyroelectric vidicon

The performance of the pyroelectric vidicon for thermal imaging in the 8-14 micron band

Beam acceptance of silicon silicon-dioxide memory tubes

The negative electron affinity Ga.As.P. cold cathode silicon vidicon

Metal-silicon Schottky diode arrays as infrared vidicon retinae

Silicon Schottky retinas for infrared imaging

High radiance, high speed AlxGa1-xAs heterojunction diodes for optical communications

Efficient laser diodes of InxGa1-xAs for 1.06 µm emission

GaAs-AlxGa1-xAs double heterostructure laser for optical fiber communication system

A new stripe-geometry double heterojunction laser with internally striped planar (ISP) structure

Thin film semiconductor waveguide with large optical nonlinearities for generating sound and third harmonic waves

Comparison of one and two-dimensional models of transistor thermal instability

A surface-controlled negative impedance transistor

Exact modeling of time-dependent phenomena in an MOS structure

Theory of the M. O. S. transistor in weak inversion - new method to determine the number of surface states

Improvements on a hybrid electron-beam piezoelectric RF storage device

Properties of nonvolatile semiconductor memories by using silicon clusters in the gate insulator

Use of anodic aluminum oxide in MOS structures

Nickel-Chromium+Gold metallization for MOS devices

Effects of process changes on double-diffused most characteristics

Low-leakage, N-channel silicon gate FET with a self-aligned field shield

Characterization of bipolar devices

Two-dimensional numerical analysis of bipolar transistor transients

Computer aided design and fabrication of an X-band oscillator transistor

Characteristics of high performance microwave transistors fabricated by ion implantation

High performance S-band microwave power transistor

S-band microwave power FET

A 100 watt TWT amplifier for the space shuttle

A high efficiency 200 watt, 12 GHz traveling-wave tube

A 50% efficient, 200 watt, coupled-cavity traveling-wave tube at 12 GHZ

Coupled-cavity coupled-line TWT

A 2KW average, gridded, PPM, X-band coupled cavity TWT

V-Band traveling-wave tube

A PPM focused TWT for upper Ka-band with a CW output power of 1 kW

Development of a thinned, backside-illuminated charge-coupled device imager

New self-scanned structures: resistive-MOS-gated diode arrays

InSb MIS structures for infrared imaging devices

An electronically tunable optical spectrometer using a collinear interaction acousto-optic filter

Ferroelectric, conductivity and secondary emission characteristics of a KD2PO4light valve

Holography with a dye laser

Optimal solar array design and accelerated life tests of CdS/Cu2S solar cells

An efficient large volume DF/CO2chemical laser system

A high energy, short pulse CO2laser system

Cold cathode investigation

Gain coefficient and output energy characteristics of a high pressure pulsed CO2laser

Spectral tuning and single-mode operation of a superradiant HF/DF laser

The application of gas plasma to the fabrication of MOS-LSI

Ultra-stable MOS input operational amplifier

N-Channel MOSFET field protection by nonmasked boron ion implantation

Threshold adjustment of N-channel enhancement mode FETs by ion implantation

Fabrication and operation of CCD structure with silicon layers grown on sapphire substrates

A charge transfer device with self-aligned electrodes

An inductive phase delay in the retarding field region of Schottky barrier BARITT diodes

Characterization of GaAs Schottky-read IMPATT diodes

Improved fabrication and noise performance of silicon double-drift millimeter-wave IMPATT diodes

Design, characterization and reliability of 6-GHz silicon IMPATT diode

KA-Band IMPATT diode reliability

The effects of doping profile, material parameters and operating conditions on the noise properties of IMPATT devices

Noise properties of transferred-electron oscillators

High power EBS diode studies

Reliable electron bombarded semiconductor power devices

Pulse amplifier EBS for high voltage modulators

Schottky-barrier diodes for electron-beam-semiconductor applications

High-power printed circuit traveling wave tubes

1 Kilowatt, J-band broadband amplifier

High efficiency, 30 KW peak power L-band TWT

Light emitting devices in the U.K.

Monolithic displays in GaP

Multi-color light emitting diodes with a double junction structure

Thermally stimulated current (T.S.C.) measurements and their correlation with efficiency and degradation in GaP LED's

Liquid crystal field effect displays

Liquid crystal pictorial display

Characteristics of a Nd:CaLaSOAP mode-locked oscillator

An E-beam ionizer sustainer $CO_{2}short$ pulse oscillator

Pulse selection and shaping based on gas breakdown

Compression and shaping of pulses from high power solid state lasers

A helically pumped disc laser amplifier

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Light emitting devices in the U.K.

Content Provider	IEEE Xplore Digital Library
Author	Dean, P.J.
Copyright Year	1973
Description	Author affiliation: Royal Radar Establishment, Malvern, Worcestershire, UK (Dean, P.J.)
Abstract	Summary form only given, as follows. This invited review deals solely with solidstate light emitters, and excludes work on plasma panels and subtractive displays. GaP LEDs were pioneered in the UK in the early 1960's and still receive much attention. Conventional red and green devices are in production. Research is concentrating on new fabrication techniques. GaAsP diodes are also in production. Research proceeds also on these additional materials: GainP, GaN, ZnSe, ZnS, and rare-earth phosphors (used as photon energy up-converters on GaAs IR diodes). ZnSe diodes are MIS structures. Since LEDs are too expensive for large displays, the UK program has concentrated on ZnS dc electroluminiscent powder panels. These various areas of work will be set in perspective in the talk given at the conference.
Starting Page	535
Ending Page	535
File Size	29551
Page Count	1
File Format	PDF
DOI	10.1109/IEDM.1973.188778
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1973-12-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Light emitting diodes Zinc compounds Plasma displays Production Gallium arsenide Radar Plasma devices Plasma materials processing Fabrication Gallium nitride
Content Type	Text
Resource Type	Article

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