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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Harris, F.H. Pankey Jr., T. Thomas, R.E. Haas, G.A. |
| Copyright Year | 1973 |
| Description | Author affiliation: Naval Research Lab., Washington, D. C. (Harris, F.H.) |
| Abstract | Recent studies of large area EBS diodes for use in a 1 kW 500 MHz CW application are given. Power dissipation of 55 watts CW on a 4 $mm^{2}diode$ has been obtained in excess of 1000 hours with no degradation in reverse voltage characteristics. At higher diode dissipation, current runaway was observed, and this was shown to be a function of the power dissipated in the diode, independent of diode voltage and current over a 100% change in diode voltage and current. The maximum diode dissipation has been related to voids in the braze to the heat sink. Diodes with void-free bonds have shown dissipation levels in excess of 100 watts CW but were limited by degassing problems in the tube. Failure with some void-free bonded EBS diodes was related to breakdown of small (\sim 3-10µm) high conductive regions of the diodes observed with a Scanning Electron Microscope. Auger surface analysis has traced this to a possible residual phosphorus contamination on the top p layer due to removal of excess Al metallization during fabrication. |
| Starting Page | 509 |
| Ending Page | 511 |
| File Size | 570519 |
| Page Count | 3 |
| File Format | |
| DOI | 10.1109/IEDM.1973.188771 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1973-12-03 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Diodes Voltage Power dissipation Degradation Heat sinks Bonding Electric breakdown Scanning electron microscopy Surface contamination Metallization |
| Content Type | Text |
| Resource Type | Article |
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