NDLI: Ion implantation in semiconductors

Content Provider	IEEE Xplore Digital Library
Author	Mayer, J.W.
Copyright Year	1973
Description	Author affiliation: California Institute of Technology, Pasadena, California (Mayer, J.W.)
Abstract	Ion implantation is being applied extensively to silicon device technology. Two principle features are utilized- 1) charge control in MOS structures for threshold shift, autoregistration, and complementary wells and 2) distribution control in microwave and bipolar structures. Another feature that has not been extensively exploited is to combine the advantages of the high resolution capabilities of electric beam pattern delineation with the low lateral spread inherent in the implantation process. This talk reviews some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage and electron activity. Implantation processes in silicon are reasonably well understood. There remain areas which require further clarification. For compound semiconductors, particularly GaAs, implantation techniques offer attractive possibilities for the fabrication of high frequency devices. In these materials, the substrate temperature during implantation and the dielectric coating required to prevent dissociation during thermal anneal play major roles.
Starting Page	3
Ending Page	5
File Size	303090
Page Count	3
File Format	PDF
DOI	10.1109/IEDM.1973.188633
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1973-12-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ion implantation Dielectric substrates Silicon devices Microwave devices Electrons Gallium arsenide Fabrication Frequency Dielectric materials Semiconductor materials
Content Type	Text
Resource Type	Article

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