NDLI: Low-leakage, N-channel silicon gate FET with a self-aligned field shield

Content Provider	IEEE Xplore Digital Library
Author	Abbas, S.A. Barile, C.A. Dockerty, R.C.
Copyright Year	1973
Description	Author affiliation: IBM System Products Division, Hopewell Junction, New York (Abbas, S.A.)
Abstract	This paper describes a low leakage n-channel Si gate FET. An n-doped polycrystalline Si field shield was used to achieve low junction leakage. Field shield and diffusion self-alignment was obtained by using a nitride-oxide insulator between the shield and the substrate. A gated diode structure and charge retention cell were used to characterize junction leakage. A -0.5 to -1.0 volt shield-to-substrate bias produced minimum junction leakage. Average minimum leakage, measured at 25°C and 9 volts reverse bias, $was6.5\times10^\{-15\}A/mil^{2};$ corresponding retention time of a charge retention cell was 158 sec. 300Å SiO2plus 300Å Si3N4was used for the gate dielectric. The silicon gate was dopea during the POCl3source-drain diffusion process. Average threshold voltage was 0.88 volts (at VSX= -3V); average normalized transconductance, 36.1 micromhos/volt, corresponds to an effective mobility of 525 $cm^{2}/V-sec.$ Devices made with a nitride-oxide gate insulator can exhibit a large threshold voltage shift when stressed at elevated temperatures. This shift is caused by the differential conductivity mechanism. The Vtshift is greatly reduced by annealing the Si3N4for 1 hr. in steam at 1000°C prior to silicon gate deposition. This anneal reduces the Vtshift from greater than 1V to less than 100mV for devices stressed at 14V, 165°C, and 500 hr.
Starting Page	371
Ending Page	373
File Size	152025
Page Count	3
File Format	PDF
DOI	10.1109/IEDM.1973.188732
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1973-12-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon FETs Insulation Threshold voltage Annealing Diodes Current measurement Charge measurement Time measurement Dielectrics
Content Type	Text
Resource Type	Article

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