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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Uchida, K. Junji Koga Shin-ichi Takagi |
| Copyright Year | 2003 |
| Description | Author affiliation: Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan (Uchida, K.; Junji Koga; Shin-ichi Takagi) |
| Abstract | The carrier transport mechanisms in single- and double-gate UTB MOSFETs are investigated. It is demonstrated that Coulomb scattering in UTB MOSFETs is greater than that in thicker body MOSFETs. It is found that, in higher Ns regions, the mobility of double-gate structures is smaller than that of single-gate structures in 4.3-nm body MOSFETs, which is due to the SOI-thickness-fluctuation-induced scattering. It is also demonstrated that Coulomb scattering is greatly suppressed in double-gate MOSFETs. The electrical characteristics of sub-1-nm body MOSFETs are also investigated. |
| File Size | 350199 |
| File Format | |
| ISBN | 0780378725 |
| DOI | 10.1109/IEDM.2003.1269402 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-12-08 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Scattering MOSFETs Interface states Stress Charge pumps P-i-n diodes Large scale integration Laboratories Phonons Implants |
| Content Type | Text |
| Resource Type | Article |
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