NDLI: New approaches to improve the endurance of TiN/HfO/sub 2//TiN capacitor during the back-end process for 70nm DRAM device

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New approaches to improve the endurance of TiN/HfO/sub 2//TiN capacitor during the back-end process for 70nm DRAM device

Content Provider	IEEE Xplore Digital Library
Author	Jae Hyoung Choi Jeong-Hee Chung Se-Hoon Oh Jeong Sik Choi Cha-Young Yoo Sung-Tae Kim U-In Chung Joo-Tae Moon
Copyright Year	2003
Description	Author affiliation: Semicond. R&D Div., Samsung Electron. Co., Ltd., Gyeonggi-Do, South Korea (Jae Hyoung Choi; Jeong-Hee Chung; Se-Hoon Oh; Jeong Sik Choi; Cha-Young Yoo; Sung-Tae Kim; U-In Chung; Joo-Tae Moon)
Abstract	We have successfully developed a MIM capacitor process technology with a HfO/sub 2/ single layer deposited by ALD (atomic layer deposition), where a Hf(NEtMe)4 and CVD-TiN cylinder-type storage-node were used as a Hf liquid source and bottom electrode for 90 nm-scale DRAMs. Our experimental results indicated that NH/sub 3/-plasma treatment on HfO/sub 2/ film promoted crystallization below 400/spl deg/C as well as the formation of a HfO/sub x/N/sub y/ layer on the surface of the HfO/sub 2/ film. With this treatment, it was possible to solve the degradation problem of the leakage current depending on deposition method of the top electrode, and a stable leakage current without degradation was obtained up to 550/spl deg/C. As a result, a TiN/HfO/sub 2//TiN (TIT) capacitor with 1.4 /spl mu/m-height storage node was successfully demonstrated with stable leakage current of 1fA/cell at +1.2 V and high cell capacitance of 40 fF after metal-2 integration.
File Size	327850
File Format	PDF
ISBN	0780378725
DOI	10.1109/IEDM.2003.1269367
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-12-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tin Hafnium oxide Leakage current Electrodes Degradation MIM capacitors Atomic layer deposition Crystallization Surface treatment Capacitance
Content Type	Text
Resource Type	Article

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