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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yu, H.Y. Kang, J.F. Chen, J.D. Ren, C. Hou, Y.T. Whang, S.J. Li, M.-F. Chan, D.S.H. Bera, K.L. Tung, C.H. Du, A. Kwong, D.-L. |
| Copyright Year | 2003 |
| Description | Author affiliation: Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore (Yu, H.Y.; Kang, J.F.; Chen, J.D.; Ren, C.; Hou, Y.T.; Whang, S.J.; Li, M.-F.; Chan, D.S.H.) |
| Abstract | We report for the first time a thermally stable and high quality HfN/HfO/sub 2/ gate stack for advanced CMOS applications. Due to the superior oxygen diffusion barrier of HfN as well as the thermal stability of the HfN/HfO/sub 2/ interface, the EOT of the HfN/HfO/sub 2/ gate stack has been successfully scaled down to less than 10/spl Aring/ with excellent leakage, boron penetration immunity, and long-term reliability, even after 1000/spl deg/C RTA treatment for 20 s, without using surface nitridation prior to HfO/sub 2/ deposition. The mobility is improved significantly for devices without surface nitridation. Negligible change in both EOT and the work function of the HfN/HfO/sub 2/ gate stack are observed after 1000/spl deg/C RTA. |
| File Size | 261087 |
| File Format | |
| ISBN | 0780378725 |
| DOI | 10.1109/IEDM.2003.1269175 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-12-08 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Robustness Hafnium oxide Thermal stability Tin Surface treatment Temperature Dielectric substrates Scalability Surface cleaning Fabrication |
| Content Type | Text |
| Resource Type | Article |
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