NDLI: Novel collector design for high-speed SiGe:C HBTs

Content Provider	IEEE Xplore Digital Library
Author	Heinemann, B. Rucker, H. Barth, R. Bauer, J. Bolze, D. Bugiel, E. Drews, J. Ehwald, K.-E. Grabolla, T. Haak, U. Hoppner, W. Knoll, D. Kruger, D. Kuck, B. Kurps, R. Marschmeyer, M. Richter, H.H. Schley, P. Schmidt, D. Scholz, R. Tillack, B. Winkler, W. Wolnsky, D. Wulf, H.-E. Yamamoto, Y. Zaumseil, P.
Copyright Year	2002
Description	Author affiliation: IHP, Frankfurt, Germany (Heinemann, B.; Rucker, H.; Barth, R.; Bauer, J.; Bolze, D.; Bugiel, E.; Drews, J.; Ehwald, K.-E.; Grabolla, T.; Haak, U.; Hoppner, W.; Knoll, D.; Kruger, D.; Kuck, B.; Kurps, R.; Marschmeyer, M.; Richter, H.H.; Schley, P.; Schmidt, D.; Scholz, R.; Tillack, B.; Winkler, W.; Wolnsky, D.; Wulf, H.-E.; Yamamoto, Y.; Zaumseil, P.)
Abstract	We describe a novel collector design for high-frequency SiGe:C HBTs without deep trenches and with low-resistance collectors formed by high-dose ion implantation after shallow trench formation. f/sub T/ values of 200 GHz at BV/sub CEO/=2.0 V and ring oscillator delays of 4.3 ps are obtained. Excellent static characteristics and high yield were achieved for the HBT module integrated in a 0.25 /spl mu/m CMOS platform.
Sponsorship	Electron. Devices Soc. IEEE
Starting Page	775
Ending Page	778
File Size	217259
Page Count	4
File Format	PDF
ISBN	0780374622
DOI	10.1109/IEDM.2002.1175953
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-12-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Heterojunction bipolar transistors Protection Fabrication Ion implantation Ring oscillators Delay CMOS process Oxidation Implants Resistors
Content Type	Text
Resource Type	Article

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