NDLI: Improved current performance of CMOSFETs with nitrogen incorporated $HfO_{2}-Al_{2}O

Content Provider	IEEE Xplore Digital Library
Author	Hyung-Seok Jung Yun-Seok Kim Jong Pyo Kim Jung Hyoung Lee Jong-Ho Lee Nae-In Lee Ho-Kyu Kang Kwang-Pyuk Suh Hyuk Ju Ryu Chang-Bong Oh Young-Wug Kim Kyung-Hwan Cho Hion-Suck Baik Young Su Chung Hyo Sik Chang Dae Won Moon
Copyright Year	2002
Description	Author affiliation: Syst. LSI Bus., Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea (Hyung-Seok Jung; Yun-Seok Kim; Jong Pyo Kim; Jung Hyoung Lee; Jong-Ho Lee; Nae-In Lee; Ho-Kyu Kang; Kwang-Pyuk Suh)
Abstract	For the first time, we integrated poly-Si gate CMOSFETs with nitrogen incorporated HfO/sub 2/-Al/sub 2/O/sub 3/ laminate (HfAlON) as gate dielectrics. Both low gate leakage currents (0.1 mA/cm/sup 2/ at V/sub g/=+1.0 V) and low EOT (15.6 /spl Aring/) sufficiently satisfy the specifications (EOT=12/spl sim/20 /spl Aring/, J/sub g/=2.2 mA/cm/sup 2/) estimated by ITRS for low power applications. By in-situ 3 step post-deposition annealing, approximately 17 at.% nitrogen is incorporated at the HfAlON/Si interface. In-situ 3 step post-deposition annealing decreases metallic Hf bonding, which exists at the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate/Si interface. As a result, we can suppress C-V hysteresis and improve current performance. Finally, well-behaved 100 nm CMOSFET devices are achieved. The measured saturation currents at 1.2 V V/sub dd/ are 585 /spl mu//spl Aring///spl mu/m (I/sub off/= 10 nA//spl mu/m) for nMOSFET and 265 /spl mu/A//spl mu/m (I/sub off/=10 nA//spl mu/m) for pMOSFET, which are approximately 80% of those of nitrided SiO/sub 2/. In terms of I/sub on/-I/sub off/ characteristics of n/pMOSFETs, these results represent the best current performance compared with previous reports for poly-Si gate CMOSFETs with high-k gate dielectrics.
Sponsorship	Electron. Devices Soc. IEEE
Starting Page	853
Ending Page	856
File Size	275894
Page Count	4
File Format	PDF
ISBN	0780374622
DOI	10.1109/IEDM.2002.1175971
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-12-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOSFETs Nitrogen Hafnium oxide MOSFET circuits Laminates Annealing Dielectrics Leakage current Bonding Capacitance-voltage characteristics
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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