NDLI: Optical design considerations and constraints for implementation of Silicon photomultiplier as a light sensor

Content Provider	IEEE Xplore Digital Library
Author	Osovizky, A. Pushkarsky, V. Ginzburg, D. Marcus, E. Kopeika, N. Manor, A. Ifergan, Y. Gonen, E. Ghelman, M. Mazor, T. Cohen-Zada, I. Kadmon, Y. Cohen, Y.
Copyright Year	2010
Description	Author affiliation: Electronics & Control Laboratories, Nuclear Research Center - Negev, Israel (Cohen, Y.) \|\| Electronics &, Control, Laboratories, Nuclear Research, Center - Negev, Israel (Marcus, E.) \|\| Radiation, Detection, Department, Rotem, Industries Ltd., Israel (Osovizky, A.; Pushkarsky, V.; Ginzburg, D.; Manor, A.; Cohen-Zada, I.) \|\| Electronics &, Control, Laboratories, Nuclear, Research Center - Negev, Israel (Ifergan, Y.; Gonen, E.; Ghelman, M.; Mazor, T.; Kadmon, Y.) \|\| Department of, Electrooptics, Engineering, Ben-Gurion, University, Israel (Kopeika, N.)
Abstract	Silicon photomultiplier (SiPM) is a novel photosensor technology. This paper presents the design optimization process for implementing this technology in a scintillator based radiation detectors. The device provides the advantages of low current consumption, small dimensions, and high gain. These properties make the SiPM of great interest for applications involving portable instrumentation. However, a novel approach to establish a set of parameters and their limits is required to optimize performance of this new technology in radiation detection applications. The trade-offs and the influence of factors, such as Photon Detection Efficiency (PDE), dynamic range (DR), various scintillation crystal characteristics, and light reflecting materials, are discussed. This study investigated the incorporation of CsI(Tl) scintillation crystals with SiPM, based on measurements and results for different photo-coupling configurations and the obtained achievements are described. A method for evaluating the photon collection efficiency for Scintillator-SiPM based detectors is proposed.
Starting Page	000506
Ending Page	000510
File Size	280402
Page Count	5
File Format	PDF
ISBN	9781424486816
e-ISBN	9781424486823
DOI	10.1109/EEEI.2010.5662169
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-11-17
Publisher Place	Israel
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Crystals Photonics Pixel Noise level Optical sensors Silicon Dynamic range
Content Type	Text
Resource Type	Article

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