NDLI: Integrated Zener diode for gate protection and voltage sourcing in integrated power management platforms

Content Provider	IEEE Xplore Digital Library
Author	Berkovitch, N. Levin, S. Yankelevich, A. Eyal, A. Shapira, S.
Copyright Year	2010
Description	Author affiliation: TowerJazz, Migdal Ha'Emek 10556, P.O. Box 619, Israel (Berkovitch, N.; Levin, S.; Yankelevich, A.; Eyal, A.; Shapira, S.)
Abstract	We describe a Zener diode integrated in a 0.18 micron based 60V Power Management Process platform. By adding one ion implant layer, a buried diode with a sharp reverse breakdown current slope is implemented. A steep rise in reverse current, from $10^{−8}$ A to $10^{−3}$ A is obtained at the breakdown region, over less then 100mV voltage variation. The buried interface has shown no breakdown voltage shifts under prolonged stress measurements at current densities exceeding 2mA/um⁁2, shifts which were clearly observed in surface diodes. By varying the implant dose the reverse breakdown voltage — Vz, can be tuned from 4.5V to 7.5V. Consequently the diode is adequate for voltage sourcing applications and gate protection of the 5V gates utilized by the LDMOS devices in the Power Management Process.
Starting Page	000511
Ending Page	000515
File Size	1337636
Page Count	5
File Format	PDF
ISBN	9781424486816
e-ISBN	9781424486823
DOI	10.1109/EEEI.2010.5662166
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-11-17
Publisher Place	Israel
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Junctions Implants Logic gates Temperature dependence Tunneling Electric breakdown Breakdown voltage
Content Type	Text
Resource Type	Article

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