NDLI: High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates

Content Provider	IEEE Xplore Digital Library
Author	Meng Qi Namoto, K. Mingda Zhu Zongyang Hu Yuning Zhao Bo Song Guowang Li Fay, P. Huili Xing Jena, D.
Copyright Year	2015
Description	Author affiliation: Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA (Meng Qi; Namoto, K.; Mingda Zhu; Zongyang Hu; Yuning Zhao; Bo Song; Guowang Li; Fay, P.; Huili Xing; Jena, D.)
Abstract	Summary form only given. In this work, RF plasma-Molecular Beam Epitaxy (MBE) grown polarization-induced AlGaN (Pi-AlGaN) p-n vertical diodes are demonstrated on Ammono single-crystal bulk GaN substrates. A highest breakdown voltage (BV) of 120 V has been achieved on a Pi-AlGaN p-n diode with a 400-nm thick ndrift region, corresponding to an Ebr of 3.3 MV/cm. The diode structures are sketched in Figure 1. As shown in Figure 1(b), the n-region of Pi-AlGaN p-n diodes consists of a 200-nm-thick nGaN layer with doping ND~1.8x1016 cm-3, followed by a 200-nm-thick n-type linearly graded AlGaN layer with the Al composition graded up from 2% to 14.5%. The effective polarization-induced doping is this layer is measured to be ND,eff~9.1x1016 cm-3. Then a 200-nm-thick linear p-type linear graded AlGaN layer with the opposite Al composition gradient from 14.5% to 2% forms the p-region of the p-n junction. As a control sample, an impurity-doped GaN p-n diode is also realized (Fig 1a) with the same thickness of nregion, but using a Si-doped GaN layer with ND~1.7x1017 cm-3. A 100-nm-thick Mg-doped GaN layer forms the p-region. P-regions of both Pi-AlGaN p-n diodes and impurity-doped GaN p-n diodes have the same Mg concentration of NA~2x1019 cm-3. Since the NA/ND~100, the depletion region is mainly in the nside for all junctions. The doping concentrations in the n-region are verified by C-V measurements (not shown). The calculated energy band diagram of Pi-AlGaN p-n diodes at zero bias is shown in Figure 2. X-ray diffraction (not shown) and transmission electron microscopy (TEM, figure 3) verify the successful realization of the layer structures and thicknesses.
Sponsorship	IEEE Electron Devices Soc.
Starting Page	31
Ending Page	32
File Size	1300996
Page Count	2
File Format	PDF
ISBN	9781467381345
e-ISBN	9781467381352
DOI	10.1109/DRC.2015.7175537
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-21
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum gallium nitride Wide band gap semiconductors Gallium nitride Semiconductor diodes Electric breakdown Doping P-n junctions
Content Type	Text
Resource Type	Article

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