NDLI: III-nitride tunnel diodes with record forward tunnel current density

Content Provider	IEEE Xplore Digital Library
Author	Krishnamoorthy, S. Pil Sung Park Rajan, S.
Copyright Year	2011
Description	Author affiliation: Department of Electrical & Computer Engineering, The Ohio State University, Columbus, OH 43210 (Krishnamoorthy, S.; Pil Sung Park; Rajan, S.)
Abstract	We report on the design, fabrication, and characterization of the first interband tunnel junctions showing forward tunneling characteristics in the III-Nitride system. We have achieved record forward tunneling currents (>100 mA/cm2 at 10 mV, and > 10 A/cm2 peak current) using polarization engineered GaN/InGaN/GaN heterojunction diodes. We also report for the first time, negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio (PVCR) of up to 5 at room temperature, and 147 at low temperature. Interband tunnel junctions can be utilized to connect multiple active regions devices such as multiple active region emitters and multi junction solar cells, which require efficient reverse tunneling and forward tunneling respectively. Efficient inter-band tunneling has been a challenge in III-Nitrides mainly due to the large band gaps found in this material system, which reduce tunneling probability. Recently, the unique property of polarization in III-nitrides was used to engineer band bending over smaller distances in nitride heterostructures to enhance tunneling [1, 2, 3], and we recently demonstrated a p-GaN/InGaN/n-GaN backward diode with record current density of 118 A/ cm2 at a reverse bias of 1 V where a thin high indium composition InGaN well was used to enhance tunneling between GaN regions [3]. Tunnel junctions are a critical component of multiple junction solar cells, and there is an interest to exploit the large band gap range of III-nitrides in such devices. However, such an application would require forward, rather than reverse tunnel diodes. In this work, we use polarization engineering to design and demonstrate the inter-band forward tunneling diodes with the high current density and low forward voltage drop.
Starting Page	1
Ending Page	2
File Size	450848
Page Count	2
File Format	PDF
ISBN	9781612842431
ISSN	15483770
e-ISBN	9781612842448
e-ISBN	9781612842424
DOI	10.1109/DRC.2011.6086644
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tunneling Gallium nitride Junctions Current density Resistance Silicon
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Polarization enhanced tunnel junctions in tandem solar cells

Electrical charaterization of lateral tunnel junctions fabricated on AlGaN/GaN heterostructures

High power III-Nitride UV emitters

N-polar III-nitride tunneling hot electron transfer amplifier

Sub-micron InGaAs Esaki diodes with record high peak current density

The role of silicon, silicon carbide and gallium nitride in power electronics

High Tunnelling Current Density in Silicon/Silicon-Germanium Junctions

Resonant tunneling diode based on nitride gallium nanostructural cathode

Ultra thin tunnel junction for use in III–V multijunction solar cells

III-nitride tunnel diodes with record forward tunnel current density

Similar Documents

Polarization enhanced tunnel junctions in tandem solar cells

Electrical charaterization of lateral tunnel junctions fabricated on AlGaN/GaN heterostructures

High power III-Nitride UV emitters

N-polar III-nitride tunneling hot electron transfer amplifier

Sub-micron InGaAs Esaki diodes with record high peak current density

The role of silicon, silicon carbide and gallium nitride in power electronics

High Tunnelling Current Density in Silicon/Silicon-Germanium Junctions

Resonant tunneling diode based on nitride gallium nanostructural cathode

Ultra thin tunnel junction for use in III–V multijunction solar cells

III-nitride tunnel diodes with record forward tunnel current density