NDLI: Monolithically grown InxGa1−xAs nanowire on silicon tandem solar cells with high efficiency

Content Provider	IEEE Xplore Digital Library
Author	Jae Cheol Shin Kyou Hyun Kim Hefei Hu Ki Jun Yu Rogers, J.A. Jian-Min Zuo Xiuling Li
Copyright Year	2011
Description	Author affiliation: Department of Materials Science and Engineering, University of Illinois, Urbana, 61801, USA (Kyou Hyun Kim; Hefei Hu; Rogers, J.A.; Jian-Min Zuo) \|\| Department of Electrical and Computer Engineering, University of Illinois, Urbana, 61801, USA (Jae Cheol Shin; Ki Jun Yu; Xiuling Li)
Abstract	Heteroepitaxial integration of III–V and Si has been researched for many years since the Si is the prevalent platform and III–V can be used for light emitting source (i.e., direct bandgap) [1]. Although vertical InAs nanowires (NWs) growth on Si substrate (11.6% lattice mismatch) without catalysts and patterning has been demonstrated by several groups, [2, 3], direct heteroexpitaxial growth of ternary InxGa1−xAs nanowires hasn't been systematically studied yet, in spite of its important spectral coverage in the near infrared range. In this paper, we report the one-dimensional heteroepitaxial growth of dislocation free InxGa1−xAs nanowires on silicon (111) substrate in the entire composition range and demonstrate monolithically grown axial p-n junction tandem solar cells consisting of InxGa1−xAs NWs on Si with an efficiency that well exceeds the planar Si single junction solar cell fabricated using identical process.
Starting Page	101
Ending Page	102
File Size	739000
Page Count	2
File Format	PDF
ISBN	9781612842431
ISSN	15483770
e-ISBN	9781612842448
e-ISBN	9781612842424
DOI	10.1109/DRC.2011.5994434
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photonic band gap
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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