NDLI: Thermal effects and instability in unipolar resistive switching devices

Content Provider	IEEE Xplore Digital Library
Author	An Chen Ming-Ren Lin
Copyright Year	2011
Description	Author affiliation: Strategic Technology Group, GLOBALFOUNDRIES, Sunnyvale, CA 94085, USA (An Chen; Ming-Ren Lin)
Abstract	Metal oxide based resistive switching devices have demonstrated promising characteristics for next-generation nonvolatile memory applications [1–4]. These devices can be electrically switched between a high-resistance state (HRS, or OFF-state) and a low-resistance state (LRS, or ON-state). The switching from HRS to LRS is called SET and that from LRS to HRS is RESET. Resistive switching may be bipolar (i.e., SET and RESET in opposite bias directions) or unipolar (i.e., SET and RESET in the same bias direction). Unipolar resistive switching devices are more compatible with two-terminal selection devices (e.g., diodes) for 3D stackable crossbar arrays. Although the resistive switching mechanisms are not yet clearly understood, it is generally believed that the switching is caused by mixed ionic/electronic effects involving some defects (e.g., mobile ions, charge traps, oxygen vacancies, etc). The RESET in bipolar resistive switching can be explained by the reversal of the physical process that causes SET [1]. For example, the reverse migration of ions/vacancies during RESET may annihilate the conductive channels formed during SET. Since no such reversal exists in unipolar resistive switching, the RESET process in unipolar switching is often explained by thermal effects. The similarity between SET and RESET operation conditions in unipolar switching devices may cause competition between SET and RESET processes, which reflects as instability in the switching characteristics. This paper presents some experimental evidences supporting the hypothesis of power-induced thermal nature of RESET and analyzes the instability associated with the SET-RESET competition in unipolar resistive switching, using data measured on Cu2O-based resistive switching devices [2, 3].
Starting Page	167
Ending Page	168
File Size	739144
Page Count	2
File Format	PDF
ISBN	9781612842431
ISSN	15483770
e-ISBN	9781612842448
e-ISBN	9781612842424
DOI	10.1109/DRC.2011.5994473
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Switches Oscillators
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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