NDLI: Indium-free transparent thin film transistors based on nanocrystalline ZnO

Content Provider	IEEE Xplore Digital Library
Author	Bayraktaroglu, B. Leedy, K. Scott, R.C.
Copyright Year	2011
Description	Author affiliation: Arizona State University, Tempe, USA (Scott, R.C.) \|\| Air Force Research Laboratory, Sensors Directorate, AFRL/RYDD, 2241 Avionics Circle, Wright Patterson AFB, OH 45433, USA (Bayraktaroglu, B.; Leedy, K.)
Abstract	Wide bandgap semiconductors based on (Zn, In, Ga, Sn)-oxides are all good candidates for the channel material in transparent thin film transistors (TTFT) because of their simultaneous high electron mobility and optical transparency properties. The choice of contact layers are, however, more limited because not all metal oxides can be doped high enough to yield low resistivity layers. Historically, the most common contact layers are ternary compounds that include indium (e.g. indium-tin-oxide, indium-zinc-oxide etc). These indium-containing transparent conductive oxide (TCO) films find widespread applications in flat panel displays and touch-sensitive surfaces of many communication devices. Because of the rapidly expanding markets for such devices, and the limited availability of indium in the world markets, the increased demand-to-supply ratio has caused the cost of indium to increase very rapidly. There are concerns about the continuity of indium supply for future $devices.^{1}$
Starting Page	245
Ending Page	246
File Size	586650
Page Count	2
File Format	PDF
ISBN	9781612842431
ISSN	15483770
e-ISBN	9781612842448
e-ISBN	9781612842424
DOI	10.1109/DRC.2011.5994516
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Zinc oxide
Content Type	Text
Resource Type	Article

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