NDLI: Design based classification for process window defect characterization of BEOL ADI layers

Content Provider	IEEE Xplore Digital Library
Author	Young Su Kim Young Hun Kwon Ki Ho Kim Tae Woong Hwang Babulnath, R. Yu, C. Desai, P.
Copyright Year	2012
Description	Author affiliation: Wafer Inspection Division, KLA-Tencor Corporation, Milpitas, California (Babulnath, R.; Yu, C.; Desai, P.) \|\| Yield Enhancement Team, System LSI Business, Samsung Electronics Co. Ltd, Yongin-City, Korea (Young Su Kim; Young Hun Kwon; Ki Ho Kim; Tae Woong Hwang)
Abstract	As design rules shrink, lithographers incorporate complex resolution enhancement techniques (RETs) that enable lithographers to extend existing lithographic processes to print features smaller than the wavelength of light used — a process called sub-wavelength lithography. These enhancements include optical proximity correction (OPC) and phase shift mask (PSM) technology, which together reduce the size and fine-tune the shape of features on the wafer. During the photolithography patterning process, marginal RET designs can print as out-of-focus features-or not print at all, creating open circuits that translate to electrical failures within the device. Two major variables, which affect the pattern printed on the wafer, are focus and exposure (dose). A number of techniques are used today to identify the process window accurately like Focus Exposure Matrix (FEM), CD $SEM^{1}$ and Process Window Qualification (PWQ). These techniques enable lithographers to understand the consequences of operating near the boundaries of the process window — allowing more informed decisions about whether to redesign the reticle or fine-tune inline defect and CD monitoring efforts to minimize the impact of the systematic defects on device yield. Particularly in back end of line (BEOL) After Develop Inspect (ADI) layers, nuisance defects (such as defects that are not visible on scanning electron microscope, defects on dummy structures, or other defects that do not affect yield) are so common, that sampling a statistically significant number of defects of interest (DOI) for PWQ becomes very time consuming and involves a lot of human effort. This paper describes the use of Design Based Classification (DBC) together with an AutoPWQ technique to improve time to results and to monitor BEOL ADI layers for process window drift. The combination of AutoPWQ + DBC method was compared to AutoPWQ alone as well as to FEM with manual sampling.
Starting Page	327
Ending Page	331
File Size	806972
Page Count	5
File Format	PDF
ISBN	9781467303507
ISSN	10788743
e-ISBN	9781467303514
DOI	10.1109/ASMC.2012.6212921
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-05-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Finite element methods Manuals Inspection Monitoring Qualifications Systematics Libraries DBC BEOL ADI PWQ
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Process Window Centering for 22 nm Lithography

Improving tool efficiency through automated process window qualification

Process Window Centering for 22 nm lithography

SpotMe effective co-optimization of design and defect inspection for fast yield ramp

In-Line Process Window Monitoring using Voltage Contrast Inspection

Advanced interconnect process development utilizing wafer inspection with "on-the-fly" automatic defect classification

Optimized sample planning for wafer defect inspection

Effective excursion detection and source isolation with defect inspection and classification

Utilizing Design Layout Information to Improve Efficiency of SEM Defect Review Sampling

Design based classification for process window defect characterization of BEOL ADI layers

Similar Documents

Process Window Centering for 22 nm Lithography

Improving tool efficiency through automated process window qualification

Process Window Centering for 22 nm lithography

SpotMe effective co-optimization of design and defect inspection for fast yield ramp

In-Line Process Window Monitoring using Voltage Contrast Inspection

Advanced interconnect process development utilizing wafer inspection with "on-the-fly" automatic defect classification

Optimized sample planning for wafer defect inspection

Effective excursion detection and source isolation with defect inspection and classification

Utilizing Design Layout Information to Improve Efficiency of SEM Defect Review Sampling

Design based classification for process window defect characterization of BEOL ADI layers