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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yu-Wen Wang Yeh, A. Pao-Chung Lin Chin-Cheng Chien Lin, C.-H.B. Xu, Z.-Q.J. Cheng, C.-Y.H. Sungchul Yoo Lin, J. Mihardja, L. Perry-Sullivan, C. |
| Copyright Year | 2012 |
| Description | Author affiliation: United Microelectronics Corporation, Tainan Science Park Tainan County 741, Taiwan, R.O.C. (Yu-Wen Wang; Yeh, A.; Pao-Chung Lin; Chin-Cheng Chien) || KLA-Tencor, Corporation, 1 Technology Drive, Milpitas, CA 95035 U.S.A. (Lin, C.-H.B.; Xu, Z.-Q.J.; Cheng, C.-Y.H.; Sungchul Yoo; Lin, J.; Mihardja, L.; Perry-Sullivan, C.) |
| Abstract | Novel process control methodologies are required for SiGe gate recess structures that are used in IC manufacturing to enhance device performance. Metrology measurements of 28nm SiGe after-etch inspection U-sigma shaped and V-sigma shaped gate structures must be able to track subtle variations for several critical parameters, including SiGe-to-gate width, tip-to-gate width, sigma depth and recess depth. For production process control of these structures, a metrology tool must utilize a nondestructive measurement technique, and have high sensitivity, precision and throughput. This paper explores the capabilities of a new-generation scatterometry critical dimension (SCD) metrology tool to measure critical parameters and serve as a production process monitor for 28nm and beyond complex gate structures. |
| Starting Page | 110 |
| Ending Page | 114 |
| File Size | 1064428 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781467303507 |
| ISSN | 10788743 |
| e-ISBN | 9781467303514 |
| DOI | 10.1109/ASMC.2012.6212879 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-05-15 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Logic gates Silicon germanium Radar measurements Correlation Metrology Shape measurement Process control metrology SiGe gate recess scatterometry critical dimension |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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