NDLI: Post Cu CMP cleaning process evaluation for 32nm and 22nm technology nodes

Content Provider	IEEE Xplore Digital Library
Author	Wei-Tsu Tseng Canaperi, D. Ticknor, A. Devarapalli, V. Tai, L. Economikos, L. MacDougal, J. Bunke, C. Angyal, M. Muncy, J. Xiaomeng Chen Zhang, J. Qiang Fang Jianping Zheng
Copyright Year	2012
Description	Author affiliation: IBM at Albany Nanotech, Albany, NY 12203, USA (Canaperi, D.) \|\| Silicon Technology Development, STMicroelectronics, Hopewell Junction, NY 12533, USA (Zhang, J.) \|\| IBM Semiconductor Research & Development Center, Hopewell Junction, NY 12533, USA (Wei-Tsu Tseng; Ticknor, A.; Devarapalli, V.; Tai, L.; Economikos, L.; MacDougal, J.; Bunke, C.; Angyal, M.; Muncy, J.; Xiaomeng Chen) \|\| Advanced Module Technology Development, GLOBALFOUNDRIES, Hopewell Junction, NY 12533, USA (Qiang Fang; Jianping Zheng)
Abstract	Optimization of post Cu CMP cleaning performance can be accomplished through dilution ratio tuning and pad rinse of clean chemicals. Excessive chemical etching as well as megasonic power can induce high Cu roughness. Generation of hollow metal and Cu dendrite defects depends not only on the clean chemistry but also the queue time between plating and anneal and between CMP and cap. AFM and XPS provide insights into the cleaning mechanism. EM and TDDB tests are the ultimate tests for the effectiveness of post Cu CMP cleaning.
Starting Page	57
Ending Page	62
File Size	1054058
Page Count	6
File Format	PDF
ISBN	9781467303507
ISSN	10788743
e-ISBN	9781467303514
DOI	10.1109/ASMC.2012.6212868
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-05-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Chemicals Surface cleaning Annealing Frequency modulation Metals post clean defect reduction Cu CMP
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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