NDLI: Silver-indium phase diagram and its applications to electronic packaging

Content Provider	IEEE Xplore Digital Library
Author	Yuan-Yun Wu Lin, W.P. Lee, C.C.
Copyright Year	2013
Description	Author affiliation: Electr. Eng. & Comput. Sci., Mater. & Manuf. Technol., Univ. of California, Irvine, Irvine, CA, USA (Yuan-Yun Wu; Lin, W.P.; Lee, C.C.)
Abstract	In this paper, we will review the silver-indium (Ag-In) phase diagram and explores its unique features that enable the development of new bonding processes for electronic packaging. Its melting range covers 156°C to 952°C, from In melting point to Ag melting point. It consists of three intermetallic compounds (IMC), $AgIn_{2},$ and $Ag_{2}In,$ and $Ag_{3}In,$ and a solid solution (Ag). Our experimental results do not show the $Ag_{3}In$ compound. In a Ag-rich joint design, only $Ag_{2}In$ and (Ag) show up. By further annealing at 250°C for 350 hours or 400°C for 5 hours, $Ag_{2}In$ converts to (Ag) by reacting with Ag. With the proper structure to begin with, a joint can be made at 180°C that contains only $Ag_{2}In$ and (Ag), achieving a melting temperature of 600°C. Annealing to convert $Ag_{2}In$ to (Ag) will increase the melting to higher than 800°C. Accordingly, various processes can be designed and developed for different packaging applications ranging from automotive electronics, high temperature electronics, and oil exploration.
Sponsorship	IEEE Orange County Sect. CPMT Chapt.
Starting Page	36
Ending Page	43
File Size	1202834
Page Count	8
File Format	PDF
ISBN	9781467360937
ISSN	15505723
e-ISBN	9781467360920
e-ISBN	9781467360913
DOI	10.1109/ISAPM.2013.6510386
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-02-27
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Joints Solids Compounds Abstracts Silicon devices Intermetallic
Content Type	Text
Resource Type	Article

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