NDLI: FRAM memory technology - advantages for low power, fast write, high endurance applications

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FRAM memory technology - advantages for low power, fast write, high endurance applications

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FRAM memory technology - advantages for low power, fast write, high endurance applications

Content Provider	IEEE Xplore Digital Library
Author	Bailey, R. Fox, G. Eliason, J. Depner, M. Kim, D. Jabillo, E. Groat, J. Walbert, J. Moise, T. Summerfelt, S. Udayakumar, K.R. Rodriquez, J. Remack, K. Boku, K. Gertas, J.
Copyright Year	2005
Description	Author affiliation: Ramtron Int. Corp., Colorado Springs, CO, USA (Bailey, R.; Fox, G.; Eliason, J.; Depner, M.; Kim, D.; Jabillo, E.; Groat, J.; Walbert, J.; Moise, T.; Summerfelt, S.; Udayakumar, K.R.; Rodriquez, J.; Remack, K.; Boku, K.; Gertas, J.)
Abstract	Summary form only given. FRAM memory technology offers a number of advantages over current memory technologies. For applications which require low power, fast write, or non-volatility with high write/read endurance, FRAM is quickly becoming the memory of choice. A number of commercial applications have been developed which benefit from these unique FRAM features and millions of units have been sold into these applications. In addition, FRAM technology offers a low cost solution for integration with logic arrays, analog, or SoC applications, especially for low power and portable electronic products. FRAM memory may also reduce or eliminate the need for multiple memory types embedded within SoC applications, thus reducing manufacturing cost and improving overall system performance. FRAM memory technology is also competitive with emerging new memory technologies, but is already commercially available. This paper will review the current technical capability of FRAM memory technology, its fundamental advantages or weaknesses with respect to other memory technologies, and its potential for integration into SoC, portable electronics, or other high functionality applications. We will highlight the electrical performance and reliability aspects of our latest 130nm gate, 5 level metal Cu/FSG 4MBit/ 8MBit FRAM technology driver.
Sponsorship	IEEE Comput. Soc. Design Autom. Tech. Comm. (DATC) IEEE Circuits and Syst. Soc. Cadence Intel
File Size	100160
File Format	PDF
ISBN	0769524516
DOI	10.1109/ICCD.2005.60
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Random access memory Ferroelectric films Nonvolatile memory USA Councils Costs Logic arrays Springs Instruments Manufacturing System performance
Content Type	Text
Resource Type	Article

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