NDLI: Vertical Bloch line memory: state of the art and future prospect

Content Provider	IEEE Xplore Digital Library
Author	Engemann, J.
Copyright Year	1989
Description	Author affiliation: Dept. of Electr. Eng., Wuppertal Univ., West Germany (Engemann, J.)
Abstract	The micromagnetically based vertical Bloch line memory (VBLM) represents the only monolithic memory concept allowing for storage densities in excess of several 100 Mb/cm/sup 2/. In conventional bubble memories, the presence or absence of vertical Bloch line pairs (VBLs) having the same chirality serves as the binary information. The current status of related research is reviewed, focusing on theoretical and experimental aspects of VBL injection either in stripe-domain heads or at the side flank walls (write function), local-stripe-domain and VBL stabilization, VBL propagation either by current or field access, and detection (read function). These individual device functions are discussed in the light of VBL stability estimates complemented by the most promising technical approaches. The design and expected performance data of a future 64 Mb VBLM currently under development at Wuppertal University are presented and discussed.<>
File Size	655668
File Format	PDF
ISBN	0818619406
DOI	10.1109/CMPEUR.1989.93348
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-05-08
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Magnetic domain walls Magnetic domains Anisotropic magnetoresistance Garnet films Stability Magnetic films Optical films Computer simulation Computational modeling Testing
Content Type	Text
Resource Type	Article

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