NDLI: E/sup 2/PROM product issues and technology trends

Content Provider	IEEE Xplore Digital Library
Author	Owen, W.H. Tchon, W.E.
Copyright Year	1989
Description	Author affiliation: Xicor Inc., Milpitas, CA, USA (Owen, W.H.; Tchon, W.E.)
Abstract	The E/sup 2/PROM (electrically erasable and programmable read-only memory), the fastest growing new form of solid-state memory, combines nonvolatility and changeability which can be changed by simple logic-level signals, therefore providing in-system change capability. Since time-to-market is a crucial system issue, as frequent changes in multiple location and rapid obsolescence are pressing problems. E/sup 2/PROMs, acting as nonvolatile memories and peripherals in up-based systems, play a growing role in presenting a solution. E/sup 2/PROM technology is divided into two major approaches. One approach is an extension of the basic floating-gate concept used in EPROMs. The other is a nitride technique called MNOS which has existed over several decades. E/sup 2/PROM system applications are discussed. The most advanced E/sup 2/PROMs today are easy-to-use single 5-V power supply, high-speed CMOS devices. It is noted that, with the obstacles of the past removed, E/sup 2/PROMs are increasingly being used in new designs.<>
File Size	150914
File Format	PDF
ISBN	0818619406
DOI	10.1109/CMPEUR.1989.93334
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-05-08
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	PROM Costs EPROM Nonvolatile memory Microprocessors Power supplies Acceleration Product development Atmosphere Logic devices
Content Type	Text
Resource Type	Article

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