NDLI: High speed nonvolatile memories employing ferroelectric technology

Content Provider	IEEE Xplore Digital Library
Author	Gnadinger, F.P.
Copyright Year	1989
Description	Author affiliation: Ramtron Corp., Colorado Springs, CO, USA (Gnadinger, F.P.)
Abstract	The problems encountered in early attempts to build a ferroelectric memory are described. A combination of design innovations and process and materials breakthroughs that can overcome these problems is presented. PZT (lead zirconate titanate) is chosen as the basic ferroelectric material and integrated into a standard CMOS process. PZT has a wide temperature range (+350 degrees C Curie temperature), low coercive voltage, high specific polarization charge (10-20 mu C/cm/sup 2/), and good retention and endurance. The lack of a well-defined coercive field was overcome with a DRAM-like circuit architecture, which provides for transistor switches in series, with each ferroelectric element preventing disturb pulses from affecting the unselected cells. As a demonstration vehicle, a fully decoded 256-b nonvolatile ferroelectric random-access memory (FRAM) was developed. The switching speed inherent in the PZT material was found to be on the order of 1 ns. The high switching speed and the high signal charge, which render the technology highly scalable, offer the potential to build nonvolatile semiconductor memories with the speed of static RAMs and the density and cost of dynamic RAMs.<>
File Size	332431
File Format	PDF
ISBN	0818619406
DOI	10.1109/CMPEUR.1989.93335
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-05-08
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nonvolatile memory Ferroelectric materials Temperature distribution Random access memory CMOS technology Process design Technological innovation Titanium compounds CMOS process Low voltage
Content Type	Text
Resource Type	Article

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