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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yaowen Liu Zongzhi Zhang Freitas, P.P. |
| Copyright Year | 1965 |
| Abstract | Experimental results on the current-induced resistance change in low-resistance (10-60 /spl Omega//spl middot//spl mu/m/sup 2/) magnetic tunnel junctions with AlO/sub x/ barriers are presented. The observed current-induced resistance change remains unaltered even when the ferromagnetic electrodes are saturated by an external field of 8.5 kOe and, therefore, is not related to the relative magnetization configuration of both electrodes. The critical switching current increases with decreasing barrier thickness (increasing hot-spot density), as well as with increasing junction area. Repeated switching (4000 pulses) leads to junction resistance decrease by 3%-4% and a decrease of the relative current-induced resistance change of about 20%, indicating an increase of hot spots or pinhole density upon current stressing. Critical current increases as current pulsewidth decreases. |
| Sponsorship | IEEE Magnetics Society |
| Starting Page | 2833 |
| Ending Page | 2835 |
| Page Count | 3 |
| File Size | 288014 |
| File Format | |
| ISSN | 00189464 |
| Volume Number | 39 |
| Issue Number | 5 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-09-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Magnetic tunneling Magnetic switching Electrical resistance measurement Electrodes Magnetization Current measurement Magnetic field measurement Switches Computer integrated manufacturing Giant magnetoresistance |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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