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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Shimizu, Y. Tanaka, A. Oshiki, M. Kataoka, Y. |
| Copyright Year | 1965 |
| Abstract | We investigated the background pressure (P/sub BG/) dependence of the unidirectional anisotropy field (H/sub ua/) of spin valve films with a PdPtMn antiferromagnetic layer fabricated by an ultrahigh vacuum (UHV) sputtering process. The H/sub ua/ increased with decreasing P/sub BG/ until P/sub BG/ reached 2/spl times/10/sup -7/ Pa. The UHV deposition, such as below 2.0/spl times/10/sup -7/ Pa of P/sub BG/, improved the fct [111] texture of PdPtMn, the fcc[111] of NiFe/CoFeB/Cu/CoFeB layers, enlarged the grains of spin valve films, and reduced an absorption of residual oxygen component into the spin valve films. Consequently, the exchange coupled CoFeB/PdPtMn layers exhibited large H/sub ua/ of 620 Oe, in spite of a quite thin PdPtMn (15 nm) as an ordered antiferromagnetic material, and the spin valve films show a large MR ratio of 7.8% and a sheet resistance change of 1.6 /spl Omega/. |
| Sponsorship | IEEE Magnetics Society |
| Starting Page | 2622 |
| Ending Page | 2624 |
| Page Count | 3 |
| File Size | 443978 |
| File Format | |
| ISSN | 00189464 |
| Volume Number | 35 |
| Issue Number | 5 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1999-09-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Spin valves Antiferromagnetic materials Sputtering Magnetic field measurement Anisotropic magnetoresistance Giant magnetoresistance Mass spectroscopy Argon Magnetic films Plasma measurements |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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