NDLI: Characteristics of a NiO barrier layer for high-T/sub c/ superconducting tunnel junction

Content Provider	IEEE Xplore Digital Library
Author	Moriya, M. Hobayashi, T. Goto, T.
Copyright Year	2002
Abstract	Characteristics of a NiO barrier layer for high-T/sub c/ superconducting tunnel junctions were investigated. Bi/sub 2/Sr/sub 2/CaCu/sub 2/O/sub x/ (BSCCO) films were deposited on a MgO or SrTiO/sub 3/ substrate using a dc hollow cathode sputtering system. In situ superconducting BSCCO films deposited in Ar+20%O/sub 2/ gas at T/sub s/=680/spl deg/C on a MgO substrate were c-axis oriented 2212 phase. A NiO layer was formed by reactive sputtering in Ar+20%O/sub 2/ gas using a NiO hollow cathode, and the layer on the BSCCO film was of [100] and [110] orientation. The current-voltage characteristics of an Ag/NiO/BSCCO junction with a NiO barrier layer 5 nm thick were investigated. In the G-V curves of some junctions, a zero bias conductance peak was observed. It is assumed that this behavior is probably due to the nonuniform thickness of the barrier layer. The junction with a thicker barrier layer (18 nm) showed tunnel current characteristics without anomaly.<>
Sponsorship	Council on Superconductivity Appl. Superconductivity Conference Inc MIT
Starting Page	2358
Ending Page	2360
Page Count	3
File Size	234692
File Format	PDF
ISSN	10518223
Volume Number	5
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Superconducting epitaxial layers Josephson junctions Bismuth compounds Sputtering Superconducting films Substrates Cathodes Argon Crystalline materials Tunneling
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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