NDLI: Experimental Study on Etching Characteristics of a Spin-Etching Method

Content Provider	IEEE Xplore Digital Library
Author	Yongdae Kim
Copyright Year	1992
Abstract	In this paper, a spin-etching method is proposed for wafer thinning using a mixture of hydrofluoric, nitric, and acetic acids (HNA solution), and experimental studies are conducted. In the spin-etching apparatus, the silicon wafer was rotated in a Teflon bath filled with HNA solution. The etch rate of HNA spin-etching can be determined by mixture ratio; mass transfer, both through and in boundary layer; and heat transfer. When the Reynolds number of the flow on the rotating disk is below 1.8 × 10⁵, the flow is in the laminar region, and the boundary layer thickness and convective heat transfer coefficient do not vary with radius at the same rotational speed. In this study, the silicon wafer was rotated at <;60 rpm, at which the flow was in the laminar region. Nevertheless, the local etch rate varied with the radial position. To investigate spin-etching characteristics of the silicon wafer rotated in the laminar region, experimental studies on etch rate and uniformity of etch of 6-in silicon wafers as the rotational speed was varied were carried out with various HNA mixture ratios.
Sponsorship	IEEE Electron Devices Society American Society of Mechanical Engineering (ASME)
Starting Page	1827
Ending Page	1831
Page Count	5
File Size	1749952
File Format	PDF
ISSN	10577157
Volume Number	24
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Velocity control Silicon Etching Force Heat transfer Chemicals wafer thinning. HNA etching silicon etching spin-etching wafer thinning
Content Type	Text
Resource Type	Article
Subject	Mechanical Engineering Electrical and Electronic Engineering

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