NDLI: Isotropic Silicon Etching With <formula formulatype=inline><tex Notation=TeX>$hbox{XeF}_{2}$</tex> </formula> Gas for Wafer-Level Micromachining Applications

Content Provider	IEEE Xplore Digital Library
Author	Dehui Xu Bin Xiong Guoqiang Wu Yuchen Wang Xiao Sun Yuelin Wang
Copyright Year	1992
Abstract	Wafer-level isotropic etching of silicon with XeF₂ gas has been investigated for microelectromechanical-system (MEMS) fabrication. Because of the large exposed silicon area in the wafer-level process, XeF₂ gas diffusion in the wafer-level process is different from the chip-level process. The silicon etch rate for the wafer-level XeF₂ process is much smaller than chip-level XeF₂ etching. Additionally, the silicon etch rate drops off as the etching time increased. The aperture size effect is apparent in the wafer-level XeF₂ processing. However, for etching windows with a large size, the aperture size effect will be minimized. Both vertical and lateral aperture size effects depend on the number of etch cycle. Although slight anisotropy is also observed, wafer-level XeF₂ etching shows a better isotropy than the chip-level process. Compared with the chip-level process, wafer-level XeF₂ etching shows a large etch rate for SiO₂. The etch selectivity between silicon and SiO₂ is lower than 1000:1. Based on the characteristics of XeF₂ etching, the layout design rule for the MEMS device with XeF₂ releasing is developed and demonstrated.
Sponsorship	IEEE Electron Devices Society American Society of Mechanical Engineering (ASME)
Starting Page	1436
Ending Page	1444
Page Count	9
File Size	1654779
File Format	PDF
ISSN	10577157
Volume Number	21
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Etching Silicon Apertures Chemicals Micromachining Micromechanical devices Mathematical model $\hbox{XeF}_{2}$ gas Design rule isotropic etching microelectromechanical systems (MEMS) micromachining wafer level
Content Type	Text
Resource Type	Article
Subject	Mechanical Engineering Electrical and Electronic Engineering

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