NDLI: A New Method for Accurate Extraction of Source Resistance and Effective Mobility in Nanoscale Multifinger nMOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Jyh-Chyrun Guo Yi-Zen Lo
Copyright Year	1963
Abstract	A new method is is developed for accurate extraction of the effective mobility (μ_eff) in the multifinger nMOSFETs with various poly-to-poly (PO-PO) spaces. The wide PO-PO space intends to increase the tensile stress from a contact etching stop layer (CESL) and yields higher μ_eff in the nMOSFETs. However, the source resistance (R_S) emerges as a critical parasitic element in the multifinger devices with a large finger number. The wide PO-PO space generally leads to the further increase of R_S, which may offset μ_eff improvement and degrade transconductance (g_m). A two-end source line is proposed to reduce RS and the impact on g_m. The complicated layout-dependent effects containing the CESL strain, R_S, and 3-D fringing capacitances bring a crucial challenge to the μ_eff extraction. In this paper, a distributed transmission line model is derived for a reliable determination of R_S, which is a key to the realization of accurate extraction of μ_eff and layout-dependent effects in multifinger devices.
Sponsorship	IEEE Electron Devices Society
Starting Page	3004
Ending Page	3011
Page Count	8
File Size	2411011
File Format	PDF
ISSN	00189383
Volume Number	62
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Noise measurement MOSFET Degradation Layout Logic gates Resistance Capacitance transmission line (TML). Contact etching stop layer (CESL) strain effective mobility (μeff) layout-dependent effects multifinger source resistance (RS) transmission line (TML) effective mobility ( $\mu _{\textrm {eff}}$ ) source resistance ( $R_{S}$ )
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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