NDLI: Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz Bandwidth

Content Provider	IEEE Xplore Digital Library
Author	Rode, J.C. Han-Wei Chiang Choudhary, P. Jain, V. Thibeault, B.J. Mitchell, W.J. Rodwell, M.J.W. Urteaga, M. Loubychev, D. Snyder, A. Wu, Y. Fastenau, J.M. Liu, A.W.K.
Copyright Year	1963
Abstract	Recent improvements in the fabrication technology of InGaAs/InP heterobipolar transistors have enabled highly scaled transistors with power gain bandwidths above 1 THz. Limitations of the conventional fabrication process that reduce RF bandwidth have been identified and mitigated, among which are high resistivity base ohmic contacts, resistive base electrodes, excessive emitter end undercut, and insufficient undercut of large-diameter base posts. A novel two-step deposition process for self-aligned metallization of sub-20-nm bases has been developed and demonstrated. In the first step, a metal stack is directly evaporated onto the base semiconductor without any lithographic processing so as to minimize contamination from resist/developer chemistry. The composite metal stack exploits an ultrathin layer of platinum that controllably reacts with base, yielding low contact resistance, as well as a thick refractory diffusion barrier, which permits stable operation at high current densities and elevated temperatures. Further reduction of overall base access resistance is achieved by passivating base and emitter semiconductor surfaces in a combined atomic layer deposition Al₂O₃ and plasma-enchanced chemical vapor depositon SiNx sidewall process. This technology enables the deposition of low-sheet-resistivity base electrodes, further improving overall base access resistance and f_max bandwidth. Additional process enhancements include the significant reduction of device parasitics by scaling base posts and controlling emitter end and base postundercut.
Sponsorship	IEEE Electron Devices Society
Starting Page	2779
Ending Page	2785
Page Count	7
File Size	8154961
File Format	PDF
ISSN	00189383
Volume Number	62
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Metals Heterojunction bipolar transistors Junctions Resistance Surface treatment Bandwidth Conductivity ultralow resistance. InGaAs/InP double heterobipolar transistor (HBT) ohmic contact refractory ultralow resistance
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Transconductance Degradation in Near-THz InP Double-Heterojunction Bipolar Transistors

THz Indium Phosphide Bipolar Transistor Technology

InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous $f_{tau}/f_{max} sim hbox{430/800} hbox{GHz}$

Collector-pedestal InGaAs/InP DHBTs fabricated in a single-growth, triple-implant process

InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f/sub /spl tau// and 505-GHz f/sub max/

InP HBT Transferred to Higher Thermal Conductivity Substrate

InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, f/sub max//spl ges/450 GHz

InP HBT technology for high frequency applications

InP/InGaAs double heterojunction bipolar transistor (DHBT) with an emitter tunneling barrier and composite collector structure

Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz Bandwidth

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