NDLI: Self-Heat Characterizations and Modeling of Multifinger nMOSFETs for RF-CMOS Applications

Content Provider	IEEE Xplore Digital Library
Author	Aoki, H. Kobayashi, H.
Copyright Year	1963
Abstract	The purpose of this paper is to characterize and model the self-heating effect (SHE) of multifinger n-channel MOSFETs (nMOSFETs). The amount of SHE is small enough not to be analyzed for single-finger bulk CMOS devices. However, SHE should be considered for multifinger nMOSFETs that are mainly used for RF-CMOS applications. The SHE mechanism was analyzed based on a 2-D device simulator. SHE model equations are derived and implemented in the BSIM6 model with Verilog-A language used in a SPICE simulator. The model improves speed and accuracy of multifinger nMOSFETs simulations. To extract thermal resistance and capacitance, an advanced ac conductance method using a vector network analyzer is developed to obtain I_ds-V_ds measurement without increasing temperatures with the proposed model and extracted parameters, excellent agreement has been obtained between measurements and simulations in dc and S-parameter domain, whereas the original BSIM6 shows inconsistency between the static dc and the small signal ac simulations due to the lack of SHE. Unlike the widely used subcircuits-based SHE models, including Silicon-On-Insulator MOSFET and power MOSFET models, the proposed SHE model can converge in large-scale circuits even for transient simulations.
Sponsorship	IEEE Electron Devices Society
Starting Page	2704
Ending Page	2709
Page Count	6
File Size	1109284
File Format	PDF
ISSN	00189383
Volume Number	62
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET Mathematical model Semiconductor device modeling Integrated circuit modeling Current measurement Temperature measurement Transmission line measurements shallow trench isolation (STI). Modeling multifinger RF-CMOS self-heating shallow trench isolation (STI)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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