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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zheng Fan Xudong Fan Li, A. Lixin Dong |
| Copyright Year | 2012 |
| Description | Author affiliation: Center of Advance Microscopy, Michigan State University, East Lansing, 48824-1226, USA (Xudong Fan) || Department of Electrical and Computer Engineering, Michigan State University, East Lansing, 48824-1226, USA (Zheng Fan; Lixin Dong) || Air Force Institute of Technology, Wright-Patterson AFB, OH 45433-7765, USA (Li, A.) |
| Abstract | A copper oxide nanowire (CuO NW) based memristor is designed for the non-volatile random access memories (NVRAM) and the resistive memory effect based transducers. The devices are prototyped using a copper oxide and cuprous oxide (CuO-CuO) hetero-junction formed from as-grown CuO NWs. We report an experimental investigation of using electron beam irradiation in fabricating such devices. Experiments have been performed using nanorobotic manipulation inside a transmission electron microscope. Because the memristor is conducted as a dynamical resistor, the bipolar resistive switching (BRS) behaviors of the as-fabricated device demonstrated typical ones of memristors. Furthermore, the as-fabricated nanowire memristor is sensitive to the electron bombardment. The irradiation ratio of NWs and the memristor effect are co-related, which is promising for the application in a transducer. The CuO NW based memristor will enrich the binary transition oxide family and holds a simpler design than the traditional thin-film version. Owing to these advantages, the CuO nanowire based memristors will facilitate their applications in nanoelectronic and potentially in micro-/nano-electromechanical systems (MEMS/NEMS). |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 1436961 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467321983 |
| ISSN | 19449399 |
| e-ISBN | 9781467322003 |
| DOI | 10.1109/NANO.2012.6322196 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-08-20 |
| Publisher Place | United Kingdom |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Switches Atomic measurements Memristors Metals memristor resistive switching nanowire hetero-junction |
| Content Type | Text |
| Resource Type | Article |
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