NDLI: Design and Optimization of Superjunction Collectors for Use in High-Speed SiGe HBTs

Content Provider	IEEE Xplore Digital Library
Author	Jiahui Yuan Cressler, J.D.
Copyright Year	1963
Abstract	After reviewing the various mechanisms causing breakdown in bipolar transistors, we present a novel collector design for silicon-germanium heterojunction bipolar transistors (SiGe HBTs). The design improves the well-known speed/breakdown voltage tradeoff in SiGe HBTs for radio-frequency (RF) and millimeter-wave applications. Applying multiple alternating p- and n-type layers (a superjunction) deep in the collector-base (CB) space-charge region (SCR) alters the electric field and electron temperature in the CB junction. Consequently, impact ionization is suppressed, whereas the width of the CB SCR is not increased, and therefore, the breakdown voltages BV_CEO and BV_CEO are increased, with no degradation in the device speed or RF performance. For a fixed alternating-current performance, BV_CEO is improved by 0.33 V, producing a SiGe HBT with f_T = 101 GHz, f_max = 351 GHz, and BV_CEO = 3.0 V, as predicted by calibrated DESSIS technology computer-aided design simulations. Concerns with regard to the influence of thermal cycles associated with fabrication are considered, and a more practical doping profile is proposed to simplify the use of superjunctions. The proposed structure is also contrasted with other approaches from the literature.
Sponsorship	IEEE Electron Devices Society
Starting Page	1655
Ending Page	1662
Page Count	8
File Size	1423530
File Format	PDF
ISSN	00189383
Volume Number	58
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon germanium Thyristors Heterojunction bipolar transistors Doping Junctions Silicon carbide Impact ionization superjunction Breakdown voltage cutoff frequency heterojunction bipolar transistor (HBT) operation speed silicon–germanium
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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