NDLI: Large SET Duration Broadening in a Fully-Depleted SOI Technology

Content Provider	IEEE Xplore Digital Library
Author	Ferlet-Cavrois, V. Kobayashi, D. McMorrow, D. Schwank, J.R. Ikeda, H. Zadeh, A. Flament, O. Hirose, K.
Copyright Year	1963
Abstract	Significant floating body effects were measured in 0.2 μm fully-depleted SOI resulting in large amounts of single event transient (SET) broadening, i.e., SET duration stretching. The transient response of single transistors and the propagation of single-event transients (SET) in chains of logic gate (inverters and NOR gates) were investigated by using either heavy ion irradiation or focused laser pulses. Single transistors displayed a particularly slow recovery after an ion strike (> 100 ns). In logic chains, large amounts of SET duration broadening, up to 30 ps/gate, were measured when the unattenuated rail-to-rail SET propagates to the output of the chain. These floating body effects occur mainly at low frequency. They are induced by the accumulation of majority carriers in the body region which contribute to reduce the threshold voltage of OFF-state transistors. This is a slow phenomenon which takes up to several tenths of a second to build-up. It is demonstrated that floating body effects are reduced when designed with body contacts or when the chain operates at high frequency.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	1811
Ending Page	1819
Page Count	9
File Size	476245
File Format	PDF
ISSN	00189499
Volume Number	57
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Laboratories Circuits Optical propagation Logic gates Pulse inverters Frequency CMOS technology Attenuation Transient response Optical pulses single event transient Body contacts floating body effects propagation induced pulse broadening
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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Generation and Propagation of Single Event Transients in 0.18-$mu{rm m}$ Fully Depleted SOI

Single-Event Transient Pulse Propagation in Digital CMOS

New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening

Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains

Attenuation of single event induced pulses in CMOS combinational logic

Hardness-by-design approach for 0.15 /spl mu/m fully depleted CMOS/SOI digital logic devices with enhanced SEU/SET immunity

Single Event Transients in Logic Circuits—Load and Propagation Induced Pulse Broadening

A Tunnel Diode Body Contact Structure to Suppress the Floating-Body Effect in Partially Depleted SOI MOSFETs

New SET Characterization Technique Using SPICE for Fully Depleted CMOS/SOI Digital Circuitry

Large SET Duration Broadening in a Fully-Depleted SOI Technology—Mitigation With Body Contacts

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