NDLI: Estimation of Heavy-Ion LET Thresholds in Advanced SOI IC Technologies From Two-Photon Absorption Laser Measurements

Content Provider	IEEE Xplore Digital Library
Author	Schwank, J.R. Shaneyfelt, M.R. McMorrow, D. Ferlet-Cavrois, V. Dodd, P.E. Heidel, D.F. Marshall, P.W. Pellish, J.A. LaBel, K.A. Rodbell, K.P. Hakey, M. Flores, R.S. Swanson, S.E. Dalton, S.M.
Copyright Year	1963
Abstract	The laser energy thresholds for SEU for SOI 1-Mbit SRAMs built in Sandia's 0.35-μm SOI technology were measured using carrier generation by two-photon absorption. The laser measurements were correlated to heavy-ion threshold LET measurements to determine an empirical relationship between laser energy threshold and heavy-ion threshold LET. This empirical relationship was used to estimate the threshold LETs for other circuits built in Sandia's 0.35-μm SOI technology and SRAMs built in IBM's 45 and 65-nm SOI technologies. For an ASIC built in Sandia's 0.35-μm SOI technology the estimated threshold from laser measurements was close to the measured heavy-ion threshold LET. However, for a dual-port SRAM also built in Sandia's 0.35-μm SOI technology and for the 45- and 65-nm IBM SOI SRAMs, the threshold LETs estimated from laser measurements did not correlate to the measured heavy-ion threshold LETs. For the IBM SRAMs, the likely cause of the discrepancy between the threshold LETs estimated from laser measurements and the threshold LETs measured by heavy-ion testing is due to the laser pulse simultaneously injecting charge into multiple transistors within a memory cell and/or in adjacent memory cells. This is due to the relatively large size of the laser spot size compared to the size of the SEU sensitive volume of the IBM SOI devices. The hardness assurance implications of these results are discussed.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	1827
Ending Page	1834
Page Count	8
File Size	562114
File Format	PDF
ISSN	00189499
Volume Number	57
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Absorption Testing Energy measurement Pulse measurements NASA Laboratories Current measurement Charge measurement Pulse width modulation Protons two-photon absorption Hardness assurance heavy-ion testing laser testing single-event upset threshold LET
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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Direct Comparison of Charge Collection in SOI Devices From Single-Photon and Two-Photon Laser Testing Techniques

Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs

Correlation of Pulsed-Laser Energy and Heavy-Ion LET by Matching Analog SET Ensemble Signatures and Digital SET Thresholds

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Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

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Proton Induced Single Event Upset in 6 T SOI SRAMs

Influence of Laser Pulse Duration in Single Event Upset Testing

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Estimation of Heavy-Ion LET Thresholds in Advanced SOI IC Technologies From Two-Photon Absorption Laser Measurements

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