NDLI: Total Ionizing Dose Hardness Assurance Issues for High Dose Rate Environments

Content Provider	IEEE Xplore Digital Library
Author	Schwank, J.R. Sexton, F.W. Shaneyfelt, M.R. Fleetwood, D.M.
Copyright Year	1963
Abstract	Transistors and ICs were irradiated at dose rates from 0.2 to 2times10⁹ rad(SiO₂)/s using a wide range of radiation sources. The mechanisms causing parametric IC failure varied with dose rate. At low dose rates from 0.2 to 100 rad(SiO₂)/s, parametric IC failure in these devices was dominated by radiation-induced degradation of the gate oxide transistors. At dose rates from 1.8times10³ to 10⁶ rad(SiO₂)/s, parametric IC degradation was dominated by large increases in radiation-induced parasitic field oxide leakage current. At very high dose rates of 2times10⁹ rad(SiO₂)/s, no parametric failure was observed due to debiasing effects caused by rail-span collapse. These differences in dose rate response can make hardness assurance testing for high dose rate environments very challenging. Simple ldquoovertestsrdquo at dose rates from 50 to 300 rad(SiO₂)/s may greatly underestimate the radiation hardness of ICs in high dose rate environments. Because the failure mechanism may vary with dose rate, circuit design, and/or device technology, the best procedure for ensuring IC radiation hardness in greater than 300 rad(SiO₂)/s environments is to use radiation sources that mimic the system environment.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	1042
Ending Page	1048
Page Count	7
File Size	451043
File Format	PDF
ISSN	00189499
Volume Number	54
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Circuit testing Threshold voltage Guidelines Ionizing radiation Annealing Laboratories Leakage current Failure analysis Circuit synthesis transistor degradation Dose rate effects electron radiation hardness assurance IC degradation LINAC radiation proton radiation total dose radiation
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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