NDLI: A Novel Feature of Neutron-Induced Multi-Cell Upsets in 130 and 180 nm SRAMs

Content Provider	IEEE Xplore Digital Library
Author	Yahagi, Y. Yamaguchi, H. Ibe, E. Kameyama, H. Sato, M. Akioka, T. Yamamoto, S.
Copyright Year	1963
Abstract	Bit-multiplicity of neutron-induced single event upsets (SEU) in CMOS SRAMs formed with 130 and 180 nm technologies was analyzed using mono-energetic, quasi-mono-energetic, and spallation neutron sources in various accelerator facilities. The energy dependence of the ratio of multi-cell upsets (MCUs) to the total number of upsets can be described by a Weibull-type function with the threshold energy of the MCU. The 130 nm SRAMs show a novel feature of multi-cell upsets (MCUs) including frequency distribution of the multiplicity of error bits. In the case of the 130 nm SRAM, the probability function of the MCU can be expressed as a sum of exponential and Lorentzian functions of the multiplicity of error bits. According to previous results of 3-dimensional device simulation, the Lorentzian component can be due to bipolar action.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	1030
Ending Page	1036
Page Count	7
File Size	1110156
File Format	PDF
ISSN	00189499
Volume Number	54
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Neutrons CMOS technology Single event upset Random access memory Error correction codes Identity-based encryption Frequency Semiconductor device testing Distribution functions Semiconductor devices SRAM Bipolar action distribution function frequency distribution Lorentzian mono-energetic neutron multi-cell upset (MCU) quasi-mono-energetic neutron single event upset (SEU) spallation neutron
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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