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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Smith, F. Mostert, S. |
| Copyright Year | 1963 |
| Abstract | We present a novel design technique for hardening field programmable gate arrays (FPGAs) against total ionizing dose (TID). There is increasing use of commercial components in space technology and it is important to recognize that the space radiation environment poses the risk of permanent malfunction due to radiation. Therefore, the integrated circuits used for spacecraft electronics must be resistant to radiation. The amount of threshold voltage shift in MOS devices caused by ionizing radiation is strongly dependant on the bias voltage applied to the gate terminal during radiation. The threshold voltage shift is much less severe under the influence of ionizing radiation if the gate voltage is 0 V with respect to the device substrate. We have direct control of the bias voltage applied to the gate terminal, and therefore can control the rate of threshold voltage shift in the MOS device. Digital electronic circuits can be hardened against TID effects by selectively applying modular redundancy. By applying Double Modular redundancy, hence, activating one module while the other is inactivated, allows the inactive modules to stop degrading during its ldquooffrdquo cycle. It is shown by means of experimentation that this new design technique provides greatly improved TID tolerance for field programmable gate arrays by means of reconfigurable computing. |
| Sponsorship | IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD |
| Starting Page | 1343 |
| Ending Page | 1349 |
| Page Count | 7 |
| File Size | 567622 |
| File Format | |
| ISSN | 00189499 |
| Volume Number | 54 |
| Issue Number | 4 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-08-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Field programmable gate arrays Threshold voltage Ionizing radiation Radiation hardening Space technology MOS devices Voltage control Redundancy Space vehicles Aerospace electronics transistors Field programmable gate arrays (FPGAs) integrated circuit radiation effects radiation effects radiation hardening |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering |
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