NDLI: Temperature Dependence of Spectroscopic Performance of Thallium Bromide X- and Gamma-Ray Detectors

Content Provider	IEEE Xplore Digital Library
Author	Onodera, T. Hitomi, K. Shoji, T.
Copyright Year	1963
Abstract	Thallium bromide (TlBr) is a compound semiconductor characterized by wide band-gap energy (2.68 eV), high atomic numbers (Tl: 81, Br: 35) and high density (7.56 g/cm³). Mobility-lifetime products for electrons and holes in TlBr crystals are 1times10³ cm²/V and 3times10^-4 cm²/V, respectively, which are comparable to for carriers in CdTe crystals. Therefore, TlBr is a suitable material for fabrication of X- and gamma-ray detectors. In this study, TlBr detectors have been fabricated from crystals grown by the traveling molten zone method. The detectors have thicknesses of approximately 0.4 mm, and have gold electrodes (3 mm in diameter) on both surfaces of the crystals. In order to evaluate the temperature dependence of the charge transport properties of the detectors, (mutau)_e and (mutau)_h in the detectors have been estimated by the Hecht analysis at various temperatures of the detectors (-40, 20, 0, 20 and 40degC). The (mutau)_h in the detectors was of the order of 10^-5 cm²/V at -40degC, and increased with increasing temperatures. The maximum value of (mutau)_h the was obtained at 20degC, and was about ten times larger than the value at -40degC. On the other hand, the (mutau)_e was approximately 1times10^-3 cm²/V between -40degC and 20degC. The temperature dependence of spectral response of the detectors has been evaluated by acquiring energy spectra of gamma-rays from ²⁴¹Am at -40, 20, 0, 20 and 40degC. At -40degC, the full-energy peak corresponding to 59.5 keV gamma-rays has been obtained from the detectors, but the energy resolution of the peak was degraded due to the hole tailing on the low-energy side of the peak. The energy resolution of the detectors gradually improved with increasing temperatures of the detectors. The best FWHM energy resolution was measured to be 5.4 keV (9.1%) at 20degC.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	860
Ending Page	863
Page Count	4
File Size	187032
File Format	PDF
ISSN	00189499
Volume Number	54
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature dependence Spectroscopy Gamma ray detectors Crystals Energy resolution Gamma ray detection Photonic band gap Charge carrier processes Electron mobility Crystalline materials spectroscopic performance Thallium bromide (TlBr) compound semiconductors gamma-ray detectors
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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