NDLI: New Readout Electronics for 3-D Position Sensitive CdZnTe/HgI<tex>$

Content Provider	IEEE Xplore Digital Library
Author	Feng Zhang Zhong He
Copyright Year	1963
Abstract	The 4th-generation readout system based on VAS_UM/TAT4 ASICs for 3-D position sensitive CdZnTe/HgI₂ detector arrays has been developed and tested. Each VAS_UM/TAT4 chip is a 129-channel self-triggered monolithic Application Specific Integrated Circuit (ASIC). One 3-D position-sensitive detector module consists of one CdZnTe or HgI₂ gamma-ray spectrometer, and one VAS_UM/TAT4 ASIC mounted on a 2.2 cmtimes2.2 cm front-end board. Each detector has an array of 11 by 11 pixel anodes fabricated on the anode surface with an area up to 2 cmtimes2 cm. The detector and the front-end board are connected by three pairs of 42-pin connectors for easy assembly and component replacement. Up to nine detector modules can be plugged into a single motherboard to form a 3 by 3 detector array. The VAS_UM/TAT4 chip can read out both the amplitude of induced charge on each electrode and the electron drift time needed for reconstructing energy deposition and three-dimensional coordinates of each radiation interaction. Three different sets of VAS_UM/TAT4 chips with different dynamic ranges and shaping times were fabricated for gamma-ray spectroscopy in CdZnTe and HgI₂. These are the first ASIC readout systems that allow multiple 3-D position sensitive CdZnTe/HgI₂ detector modules to be tiled together, to achieve a detection volume greater than 50 cm ³ on a single detector plane. Multiple planes of detector arrays can be operated together to achieve more than 100 cm³ detection volume on a single system. In this paper, the VAS_UM/TAT4 ASIC systems are described and their test results are reported
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	3021
Ending Page	3027
Page Count	7
File Size	1166939
File Format	PDF
ISSN	00189499
Volume Number	53
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Readout electronics Position sensitive particle detectors Sensor arrays Application specific integrated circuits System testing Spectroscopy Anodes Circuit testing Gamma ray detection Gamma ray detectors three-dimensional (3-D) Array CdZnTe CZT position sensitive readout spectrometer
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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