NDLI: Numerical Simulation of Radiation Damage Effects in p-Type and n-Type FZ Silicon Detectors

Content Provider	IEEE Xplore Digital Library
Author	Petasecca, M. Moscatelli, F. Passeri, D. Pignatel, G.U.
Copyright Year	1963
Abstract	In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluencies of 1times10 ¹⁶ n/cm². In this work two numerical simulation models will be presented for p-type and n-type silicon detectors, respectively. A comprehensive analysis of the variation of the effective doping concentration (N_eff), the leakage current density and the charge collection efficiency as a function of the fluence has been performed using the Synopsys T-CAD device simulator. The simulated electrical characteristics of irradiated detectors have been compared with experimental measurements extracted from the literature, showing a very good agreement. The predicted behaviour of p-type silicon detectors after irradiation up to 10¹⁶ n/cm² shows better results in terms of charge collection efficiency and full depletion voltage, with respect to n-type material, while comparable behaviour has been observed in terms of leakage current density
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	2971
Ending Page	2976
Page Count	6
File Size	238099
File Format	PDF
ISSN	00189499
Volume Number	53
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Numerical simulation Radiation detectors Silicon radiation detectors Leakage current Collaborative work Semiconductor process modeling Numerical models Performance analysis Doping Analytical models radiation damage effects Device simulation particle physics
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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