NDLI: Gate-source-drain architecture impact on DC and RF performance of sub-100-nm elevated source/drain NMOS transistors

Content Provider	IEEE Xplore Digital Library
Author	Jeamsaksiri, W. Jurczak, M. Grau, L. Linten, D. Augendre, E. De Potter, M. Rooyackers, R. Wambacq, P. Badenes, G.
Copyright Year	1963
Abstract	It has been known that using selective epitaxial growth (SEG) of silicon, to elevate source/drain regions, is beneficial to digital CMOS by reducing the junction leakage. In addition, this architecture also reduces the gate resistance by enabling a T-shape gate and allowing thicker silicides, which is beneficial for RF-CMOS regarding increased maximum oscillation frequency (f/sub max/) and lowering of the noise figure (NF). In this paper, we report the impact of the SEG-deep source/drain implant (DSDI) process sequence and Co silicide thickness on DC and RF performance of NMOS transistors. Up to a 28%-45% improvement in f/sub max/ is achievable due to a T-shaped gate and thicker Co, made possible by an elevated source/drain (/sup E/S/D) architecture. The maximum transconductance (g/sub m/) of the /sup E/S/D device reaches a value of 1100 mS/mm, which in turn gives a very high f/sub T/ of 150 GHz. The low gate sheet resistance obtained with this architecture is also very beneficial for suppressing noise figure in the low-noise amplifier (LNA) circuit demonstrated in this paper. Furthermore, it is shown by simulation that the noise performance of an RF LNA improves due to the SEG and the Co thickness in the T-shaped gate of the NMOS transistor.
Sponsorship	IEEE Electron Devices Society
Starting Page	610
Ending Page	617
Page Count	8
File Size	700248
File Format	PDF
ISSN	00189383
Volume Number	50
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS integrated circuits Integrated circuit noise Epitaxial growth Ion implantation MMIC amplifiers Silicon Integrated circuit metallization Cobalt compounds MOSFETs
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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