NDLI: The fabrication of polysilicon thin film transistors by copper-induced lateral crystallization

Content Provider	IEEE Xplore Digital Library
Author	Wei-Chieh Hsueh Si-Chen Lee
Copyright Year	1963
Abstract	The material properties and device characteristics of copper-induced polysilicon thin-film transistors (TFTs) are investigated. In preparation of polysilicon through copper-induced lateral crystallization, it was found that the growth rate of copper-induced polysilicon is approximately 4-14 times faster than that of Ni-induced polysilicon and the grain size is 10-20 times smaller. The nucleation mechanism induced by copper is the normal phase transition of the accumulated thermal effect while that induced by Ni is the migration of NiSi/sub 2/. The Cu-induced poly-Si TFT exhibits a field effect mobility of 24 cm/sup 2//V-sec, a threshold voltage of 6.6 V, and a subthreshold swing of 3.26 V/decade at a drain voltage V/sub DS/=10 V.
Sponsorship	IEEE Electron Devices Society
Starting Page	816
Ending Page	821
Page Count	6
File Size	910855
File Format	PDF
ISSN	00189383
Volume Number	50
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Thin film transistors Copper Semiconductor device fabrication Electron microscopy Raman scattering Charge carrier mobility
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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