NDLI: 0.1-/spl mu/m p/sup +/-GaAs gate HJFET's fabricated using two-step dry-etching and selective MOMBE growth techniques

Content Provider	IEEE Xplore Digital Library
Author	Wada, S. Furuhata, N. Tokushima, M. Fukaishi, M. Hida, H. Maeda, T.
Copyright Year	1963
Abstract	This paper reports the first successful fabrication of high-performance, 0.1-/spl mu/m p/sup +/-gate pseudomorphic heterojunction-FET's (HJFET's). By introducing the two-step dry-etching technique which compensates for the poor dry-etching resistance of PMMA, 0.1-/spl mu/m or less gate-openings with a high aspect-ratio of 3.5 in SiO/sub 2/ film are achieved. In addition, by using the gate electrode filling technique with selective MOMBE p/sup +/-GaAs growth, 0.1-/spl mu/m voidless p/sup +/-GaAs gate electrodes with a high aspect-ratio are achieved for the first time. The fabrication technology leads to a reduction of external gate fringing capacitance (Ce/sup ext//sub f/) in a T-shaped gate-structure and an improvement in gate turn-on voltage. The fabricated 0.1-/spl mu/m, T-shaped, p/sup +/-gate n-Al/sub 0.2/Ga/sub 0.8/As/In/sub 0.25/Ga/sub 0.75/As HJFET exhibits a high gate turn-on voltage (V/sub f/) of about 0.9 V, and a good gm/sub max/ of 435 mS/mm. Also, an excellent microwave performance of f/sub T/=121 GHz and f/sub max/=144 GHz is achieved due to the C/sup ext//sub f/ reduction. The technology and device show great promise for future high-speed applications, such as in power devices, MMIC's, and digital IC's.
Sponsorship	IEEE Electron Devices Society
Starting Page	1183
Ending Page	1189
Page Count	7
File Size	216620
File Format	PDF
ISSN	00189383
Volume Number	45
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Electrodes Voltage Filling Molecular beam epitaxial growth Capacitance Microwave devices Application specific integrated circuits High speed integrated circuits Digital integrated circuits
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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