NDLI: Low-frequency noise properties of selectively dry etched InP HEMT's

Content Provider	IEEE Xplore Digital Library
Author	Duran, H.C. Ren, L. Beck, M. Py, M.A. Begems, M. Bachtold, W.
Copyright Year	1963
Abstract	The low-frequency noise of lattice-matched InAlAs/InGaAs/InP high electron mobility transistors (HEMT's) gate recess etched with a highly selective dry etching process and with conventional wet etching were studied at different gate and drain biases for the temperature range of 77-340 K. The measurements showed a significantly lower normalized drain current 1/f noise for the dry etched HEMT's under all bias conditions. No difference in the normalized gate current 1/f noise could be observed for the two device types. By varying the temperature, four electron traps could be identified in the drain current noise spectra for both dry and wet etched devices. No additional traps were introduced by the dry etching step. The concentration of the main trap in the Schottky layer is one order of magnitude lower for the dry etched HEMT's. No hydrogen passivation of the shallow donors was observed in these devices. We presume hydrogen passivation of the deep levels as the cause for the trap density reduction. The kink effect in the dry etched HEMT's was observed to be reduced significantly compared with wet etched devices which gives further evidence of trap passivation during dry etching. These results show that dry etched InP HEMT's have suitable characteristics for the fabrication of devices for noise sensitive applications.
Sponsorship	IEEE Electron Devices Society
Starting Page	1219
Ending Page	1225
Page Count	7
File Size	191308
File Format	PDF
ISSN	00189383
Volume Number	45
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Low-frequency noise Dry etching Indium phosphide HEMTs Wet etching Electron traps Passivation Hydrogen Indium compounds Indium gallium arsenide
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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