NDLI: Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/lnAs broken-gap interband tunneling structures

Content Provider	IEEE Xplore Digital Library
Author	Meng Hwang Liu Yeong Her Wang Mau Phon Houng
Copyright Year	1963
Abstract	Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs BGIT's are investigated. The broadening mechanisms due to inelastic scattering are incorporated into the interband tunneling theory. The transmission and reflection coefficients are calculated with the aid of a three-band model, in which the conduction, light-hole, and split-off bands are coupled with one another. It is found that the inelastic scattering lowers the transmission peak and broadens the full-width at half-maximum, resulting in the decrease of the tunneling current. The calculated tunneling current due to inelastic scattering is found to have better agreement with the experiments. In addition, as the valley current plays an important role in the peak-to-valley current ratio (PVR), we then try to deduce the origin of the valley currents. The thermionic current is included in the valley current to estimate the peak-to-valley current ratio. The thermionic component from the GaSb well has important contribution to the valley current in the studied structures. The peak-to-valley current ratio is also estimated and found to have better agreement with the experiment when the inelastic scattering is considered.
Sponsorship	IEEE Electron Devices Society
Starting Page	1213
Ending Page	1218
Page Count	6
File Size	165042
File Format	PDF
ISSN	00189383
Volume Number	45
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resonance light scattering Current density Optical coupling Resonant tunneling devices Conducting materials Semiconductor materials Light scattering Displays Physics Temperature
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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